FDMB3900AN Fairchild Semiconductor, FDMB3900AN Datasheet - Page 2

• Manufacturer Part Number: FDMB3900AN
• Manufacturer: Fairchild Semiconductor

©2011 Fairchild Semiconductor Corporation
FDMB3900AN Rev.C1
NOTES:
1. R
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0 %.
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
BV
ΔBV
I
I
V
r
g
C
C
C
R
t
t
t
t
Q
Q
Q
V
t
Q
ΔV
DSS
GSS
d(on)
r
d(off)
f
rr
DS(on)
the user's board design.
FS
GS(th)
SD
ΔT
ΔT
iss
oss
rss
g
g(TOT)
gs
gd
rr
Symbol
θJA
DSS
GS(th)
DSS
J
J
is determined with the device mounted on a 1 in
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Parameter
2
T
pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
J
a. 80 °C/W when mounted on
= 25 °C unless otherwise noted
a 1 in
2
pad of 2 oz copper
I
I
V
V
V
V
I
V
V
V
T
D
D
D
V
V
V
V
V
f = 1MHz
V
V
I
DS
GS
J
GS
GS
GS
GS
DS
F
DD
GS
GS
GS
DS
= 250 μA, V
= 250 μA, referenced to 25 °C
GS
GS
= 250 μA, referenced to 25 °C
= 125 °C
= 7.0 A, di/dt = 100 A/μs
= 20 V, V
= ±20 V, V
= V
= 10 V, I
= 4.5 V, I
= 10 V, I
= 5 V, I
= 13 V, V
= 13 V, I
= 10 V, R
= 0 V to 10 V
= 0 V to 5 V
= 0 V, I
= 0 V, I
2
DS
Test Conditions
, I
D
S
S
D
D
D
D
GS
= 7.0 A
= 1.25 A
= 7.0 A
GS
D
GS
GEN
DS
= 250 μA
= 7.0 A
= 7.0 A
= 7.0 A
= 5.5 A
= 0 V
= 0 V
= 0 V
= 0 V
= 6 Ω
V
I
D
DD
= 7.0 A
= 13 V
(Note 2)
(Note 2)
θJC
is guaranteed by design while R
b.165 °C/W when mounted on
Min
1.0
a minimum pad of 2 oz copper
25
0.8
0.9
Typ
650
151
141
2.0
3.0
14
0.8
2.0
19
26
26
27
17
15
11
3
-6
6
3
3
7
θCA
±100
Max
890
200
215
1.2
1.2
3.0
24
10
23
33
32
www.fairchildsemi.com
12
10
26
10
17
10
1
is determined by
mV/°C
mV/°C
Units
mΩ
nC
μA
nA
pF
pF
pF
ns
nC
nC
nC
nC
Ω
ns
ns
ns
ns
V
V
V
S