FDMB3900AN Fairchild Semiconductor, FDMB3900AN Datasheet - Page 3

• Manufacturer Part Number: FDMB3900AN
• Manufacturer: Fairchild Semiconductor

©2011 Fairchild Semiconductor Corporation
FDMB3900AN Rev.C1
Typical Characteristics
1.6
1.4
1.2
1.0
0.8
0.6
28
21
14
28
21
14
Figure 3. Normalized On- Resistance
7
0
7
0
Figure 1.
-75
1
Figure 5. Transfer Characteristics
0
V
I
D
PULSE DURATION = 80
DUTY CYCLE = 0.5%MAX
GS
V
= 7 A
DS
-50
= 10 V
vs Junction Temperature
= 5 V
T
V
V
-25
J
GS
DS
On-Region Characteristics
,
V
JUNCTION TEMPERATURE (
GS
2
, GATE TO SOURCE VOLTAGE (V)
1
,
T
DRAIN TO SOURCE VOLTAGE (V)
= 6 V
V
J
GS
V
= 150
0
GS
= 10 V
= 4.5 V
25
o
μ
C
s
PULSE DURATION = 80
DUTY CYCLE = 0.5%MAX
3
2
50
T
J
T
= 25°C unless otherwise noted
J
75
= -55
T
J
= 25
o
o
4
3
100 125 150
C )
C
V
o
V
GS
C
GS
= 3.5 V
= 4 V
μ
s
5
4
3
0.1
80
60
40
20
30
10
Figure 2.
Figure 4.
4
3
2
1
0
0
1
Forward Voltage vs Source Current
0.2
vs Drain Current and Gate Voltage
Figure 6.
2
0
PULSE DURATION = 80
DUTY CYCLE = 0.5%MAX
V
V
GS
GS
T
J
= 0 V
V
= 3.5 V
= 150
0.4
SD
Normalized On-Resistance
, BODY DIODE FORWARD VOLTAGE (V)
On-Resistance vs Gate to
V
GS
Source Voltage
Source to Drain Diode
o
4
7
I
C
D
,
,
GATE TO SOURCE VOLTAGE (V)
T
DRAIN CURRENT(A)
0.6
J
= 25
o
μ
C
s
0.8
14
6
PULSE DURATION = 80
DUTY CYCLE = 0.5%MAX
V
T
V
GS
J
GS
T
= 125
J
= 4 V
= 6 V
= -55
1.0
T
J
o
= 25
C
o
C
21
8
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o
V
V
C
1.2
GS
GS
I
D
= 4.5 V
= 10 V
= 7 A
μ
s
1.4
10
28