FDMB3900AN Fairchild Semiconductor, FDMB3900AN Datasheet - Page 4

• Manufacturer Part Number: FDMB3900AN
• Manufacturer: Fairchild Semiconductor

©2011 Fairchild Semiconductor Corporation
FDMB3900AN Rev.C1
Typical Characteristics
10
8
6
4
2
0
8
6
4
2
0
Figure 7.
Figure 9.
25
300
100
0
0.5
10
Current vs Ambient Temperature
10
R
1
I
D
θ
JA
-4
= 7 A
= 80
50
T
Maximum Continuous Drain
o
Gate Charge Characteristics
C/W
A
,
3
AMBIENT TEMPERATURE
Q
g
, GATE CHARGE(nC)
V
10
V
75
DS
GS
-3
= 10 V
= 4.5 V
Figure 11. Single Pulse Maximum Power Dissipation
6
V
100
T
GS
J
= 25°C unless otherwise noted
= 10 V
V
DS
10
= 15 V
(
o
-2
9
C )
125
V
DS
= 13 V
t, PULSE WIDTH (sec)
150
12
10
-1
4
0.01
0.1
900
800
700
600
500
400
300
200
100
40
10
1
0.01
1
0.1
Figure 8.
Figure 10.
THIS AREA IS
LIMITED BY r
SINGLE PULSE
T
R
T
J
A
θ
JA
= MAX RATED
= 25
V
V
DS
= 165
DS
to Source Voltage
0.1
, DRAIN to SOURCE VOLTAGE (V)
, DRAIN TO SOURCE VOLTAGE (V)
o
Capacitance vs Drain
Operating Area
C
10
o
C/W
Forward Bias Safe
DS(on)
1
1
SINGLE PULSE
R
T
A
θ
JA
C
C
C
= 25
100
oss
iss
rss
= 165
o
C
o
10
C/W
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10
f = 1 MHz
V
GS
1 ms
10 s
DC
100
10 ms
100 ms
1 s
= 0 V
1000
μ
s
100
25