FDB33N25 Fairchild Semiconductor, FDB33N25 Datasheet
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FDB33N25
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FDB33N25 Summary of contents
Page 1
... R Thermal Resistance, Junction-to-Ambient θJA * When mounted on the minimum pad size recommended (PCB Mount) ©2006 Fairchild Semiconductor Corporation FDB33N25 / FDI33N25 Rev A Description = 10 V These N-Channel enhancement mode power field effect GS transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. ...
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... V ≤ Starting DSS 4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ Essentially Independent of Operating Temperature Typical Characteristics FDB33N25 / FDI33N25 Rev A Package Reel Size D2-PAK 330mm I2-PAK - T = 25°C unless otherwise noted ...
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... Drain Current [A] D Figure 5. Capacitance Characteristics 4000 3000 C oss C iss 2000 1000 C rss Drain-Source Voltage [V] DS FDB33N25 / FDI33N25 Rev A Figure 2. Transfer Characteristics Notes : 1. 250 μ s Pulse Test Figure 4. Body Diode Forward Voltage ...
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... Operation in This Area is Limited by R DS(on Drain-Source Voltage [ FDB33N25 / FDI33N25 Rev A (Continued) Figure 8. On-Resistance Variation 3.0 2.5 2.0 1.5 1.0 * Notes : 250 μ A 0.5 D 0.0 50 100 150 200 -100 o C] Figure 10. Maximum Drain Current ...
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... Unclamped Inductive Switching Test Circuit & Waveforms FDB33N25 / FDI33N25 Rev A Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms 5 www.fairchildsemi.com ...
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... FDB33N25 / FDI33N25 Rev A Peak Diode Recovery dv/dt Test Circuit & Waveforms 6 www.fairchildsemi.com ...
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... Mechanical Dimensions FDB33N25 / FDI33N25 Rev PAK 7 Dimensions in Millimeters www.fairchildsemi.com ...
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... Mechanical Dimensions FDB33N25 / FDI33N25 Rev PAK 8 Dimensions in Millimeters www.fairchildsemi.com ...
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... PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Preliminary No Identification Needed Obsolete FDB33N25 / FDI33N25 Rev A ISOPLANAR™ PowerEdge™ LittleFET™ PowerSaver™ MICROCOUPLER™ PowerTrench ® MicroFET™ ...