FDB33N25 Fairchild Semiconductor, FDB33N25 Datasheet - Page 4
FDB33N25
Manufacturer Part Number
FDB33N25
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology
Manufacturer
Fairchild Semiconductor
Datasheet
1.FDB33N25.pdf
(9 pages)
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FDB33N25 / FDI33N25 Rev A
Typical Performance Characteristics
Figure 9. Maximum Safe Operating Area
Figure 7. Breakdown Voltage Variation
10
10
10
10
-1
1.2
1.1
1.0
0.9
0.8
2
1
0
10
-100
0
Operation in This Area
is Limited by R
vs. Temperature
-50
V
T
DS
J
DS(on)
, Junction Temperature [
, Drain-Source Voltage [V]
0
10
1
10
10
1 0
-1
-2
1 0
0
-5
50
DC
D =0.5
0.01
0.05
0.02
100 ms
Figure 11. Transient Thermal Response Curve
0.2
* Notes :
0.1
1. T
2. T
3. Single Pulse
10 ms
C
J
= 150
= 25
100
1 ms
o
1 0
o
C
o
C]
C
10
-4
* Notes :
100
2
1. V
2. I
t
1
D
GS
, S q uare W ave P ulse D uration [sec]
150
μ
= 250
single pulse
s
= 0 V
10
μ
A
μ
s
10
-3
200
(Continued)
4
10
-2
40
30
20
10
0
25
Figure 8. On-Resistance Variation
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Figure 10. Maximum Drain Current
-100
P
* N o te s :
DM
1 . Z
2 . D u ty F a ctor, D = t
3 . T
1 0
-1
θ
JM
JC
(t) = 0 .5 3
- T
50
t
-50
1
C
t
2
= P
vs. Case Temperature
T
D M
C
T
o
1 0
, Case Temperature [
C /W M ax.
vs. Temperature
* Z
J
, Junction Temperature [
1
0
/t
θ
0
JC
75
2
(t)
50
1 0
100
1
o
100
C]
o
C]
125
* Notes :
1. V
2. I
150
D
GS
= 16.5 A
= 10 V
www.fairchildsemi.com
150
200