FDB33N25 Fairchild Semiconductor, FDB33N25 Datasheet - Page 3

• Manufacturer Part Number: FDB33N25
• Description: These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology
• Manufacturer: Fairchild Semiconductor

FDB33N25 / FDI33N25 Rev A
Typical Performance Characteristics
Figure 5. Capacitance Characteristics
Figure 3. On-Resistance Variation vs.
Figure 1. On-Region Characteristics
10
10
10
0.25
0.20
0.15
0.10
0.05
0.00
2
1
0
10
4000
3000
2000
1000
Drain Current and Gate Voltage
-1
0
Top :
Bottom :
0
10
-1
15.0 V
10.0 V
5.5 V
8.0 V
7.0 V
6.5 V
6.0 V
V
GS
20
C
C
C
V
iss
oss
rss
DS
V
, Drain-Source Voltage [V]
DS
10
I
D
, Drain-Source Voltage [V]
0
, Drain Current [A]
40
10
0
V
GS
= 10V
60
C
C
C
iss
oss
rss
V
10
= C
GS
= C
= C
* Notes :
1
10
1. 250
2. T
= 20V
gs
gd
ds
1
80
+ C
* Note : T
+ C
C
= 25
gd
μ
gd
s Pulse Test
(C
* Note ;
1. V
2. f = 1 MHz
o
ds
C
= shorted)
J
= 25
GS
= 0 V
o
C
100
3
10
10
10
12
10
8
6
4
2
0
10
10
10
2
1
0
0
2
2
1
0
0.2
Figure 2. Transfer Characteristics
Figure 4. Body Diode Forward Voltage
Figure 6. Gate Charge Characteristics
150
0.4
Variation vs. Source Current
25
o
o
C
4
C
10
150
Q
V
0.6
V
G
GS
and Temperatue
SD
o
, Total Gate Charge [nC]
C
, Gate-Source Voltage [V]
, Source-Drain voltage [V]
25
6
V
V
V
o
0.8
C
DS
DS
DS
-55
= 200V
= 50V
= 125V
20
o
C
1.0
8
1.2
* Note : I
30
* Notes :
* Notes :
1. V
2. 250
1. V
2. 250
DS
D
10
GS
= 33A
= 40V
μ
s Pulse Test
μ
= 0V
1.4
s Pulse Test
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40
1.6
12