IFS75S12N3T4_B11 Infineon Technologies, IFS75S12N3T4_B11 Datasheet
IFS75S12N3T4_B11
Specifications of IFS75S12N3T4_B11
Related parts for IFS75S12N3T4_B11
IFS75S12N3T4_B11 Summary of contents
Page 1
... Digitale Schnittstelle 5V-CMOS, galvanische Trennung nach IEC61800-5-1 digital interface 5V-CMOS, galvanic isolation according to IEC61800-5-1 Normen IEC61800-5-1 (Overvoltage Category III, Polution Degree 2, standards Insulating Material Groupe II), UL94, RoHs Blockschaltbild block diagram Foto photo prepared by: US date of publication: 16.08.2011 approved by: MH revision: 2.1 1(13) DB_IFS75S12N3T4_B11_2V1_2011-08-16 ...
Page 2
... 150 A 349 W +/-20 V min. typ. max. 1,85 2,15 V 2,15 V 2,25 V 5,2 5,8 6,4 V 0,57 µC 10 4,30 nF 0,16 nF 1,0 mA 100 nA 0,135 µs 0,15 µs 0,152 µs 0,036 µs 0,042 µs 0,045 µs 0,33 µs 0,38 µs 0,42 µs 0,108 µs 0,190 µs 0,222 µs 4,87 mJ 7,7 mJ 8,92 mJ 4,76 mJ 7,16 mJ 7,95 mJ 270 A 0,43 K/W 0,195 K/W DB_IFS75S12N3T4_B11_2V1_2011-08-16 ...
Page 3
... R thCH = 1 W/(m*K) grease < 200° vjop R thJC 3(13) Zieldaten Target Data 1200 150 A 960 A²s 960 A²s 217 W min. typ. max. 1,70 2,15 V 1, 105 A 8,2 µC 13,8 µC 15,5 µC 4,8 mJ 6,9 mJ 7,7 mJ 0,69 K/W 0,31 K/W min. typ. max. 2,376 2,40 2,424 m < 30 ppm/K 200 °C 13,0 K/W DB_IFS75S12N3T4_B11_2V1_2011-08-16 ...
Page 4
... CC´+EE´ max stg M G 4(13) min. typ. max. 5, 20,0 mW 3375 K 3411 K 3433 K min. typ. max. 2 7,5 mm > 200 min. typ. max. 0,011 K 1,2 m 175 °C -40 150 °C -40 125 °C -40 125 °C 3,00 - 6,00 Nm 316 g DB_IFS75S12N3T4_B11_2V1_2011-08-16 ...
Page 5
... [-83,3A; +83,3A], f THD = [-83,3A; +83,3A], f 1kHz 5(13) Zieldaten Target Data min. typ. max. 30,0 kHz 1420 V 2500 V 50 kV/µs 6000 V 6000 -133,3 - +133,3 A -83,3 - +133 49,6 50,0 50 100 0,0 % -1, 0,4 % PDM 1) % 0,09 - 0,135 PDM 1) % 0,116 - 0,15 PDM 10 12 bit DB_IFS75S12N3T4_B11_2V1_2011-08-16 ...
Page 6
... SDS SDH t CLK t CLKRT t CLKFT t SDRT t SDFT t CLKpulses 6(13) Zieldaten Target Data min. typ. max. 4,75 5,00 5,25 V 4,5 5,0 5 4,3 4,4 V 3,9 4,1 V 0,1 0,2 V 4,0 4,3 V 3,5 3,7 V 0,2 0,3 V min. typ. max. 0,12 0,26 V 4,48 4,8 V -22 mA 14,5 mA 1,16 ns 1,16 ns 0,17 0,26 V 3,98 4,3 V -22 mA 14,5 mA 1,16 ns 1,16 ns 9,3 10,0 10,5 MHz 1,3 4,5 ns 0,5 1,5 2,5 ns 0,5 1,5 2,5 ns 0,5 1,5 2,5 ns 0,5 1,5 2,5 ns 250 ns DB_IFS75S12N3T4_B11_2V1_2011-08-16 ...
Page 7
... prepared by: US date of publication: 16.08.2011 approved by: MH revision: 2.1 Zieldaten Target Data typisch typisch 0,16 0,16 0,14 0,14 0,12 0,12 0,1 0,1 0,08 0,08 deltaPDM [%] deltaPDM [%] 0,06 0,06 0,04 0,04 0,02 0, 4,5 4,5 4,75 4, [V] [V] CC1 CC1 7(13) 5,25 5,25 5,5 5,5 DB_IFS75S12N3T4_B11_2V1_2011-08-16 ...
Page 8
... SNR [dB] SNR [dB 71,5 71 70,5 70,5 -60 -40 -20 -60 -40 - 100 120 140 160 100 120 140 160 typisch typisch fCLK [MHz -60 -40 - 100 120 140 160 8(13) DB_IFS75S12N3T4_B11_2V1_2011-08-16 ...
Page 9
... C 18 Eon, Tvj = 125° Eoff, Tvj = 125° C Eon, Tvj = 150° Eoff, Tvj = 150° 9(13) 2,5 2 3,5 3 4,5 4 [V] [ 105 120 135 150 [ DB_IFS75S12N3T4_B11_2V1_2011-08-16 ...
Page 10
... Tvj = 25° C Tvj = 25° C Tvj = 125° C Tvj = 125° C Tvj = 150° C Tvj = 150° 10(13) Zieldaten Target Data 800 800 1000 1000 1200 1200 1400 1400 [V] [ 105 120 135 150 I [A] F DB_IFS75S12N3T4_B11_2V1_2011-08-16 ...
Page 11
... prepared by: US date of publication: 16.08.2011 approved by: MH revision: 2.1 Zieldaten Target Data 11(13) DB_IFS75S12N3T4_B11_2V1_2011-08-16 ...
Page 12
... Technische Information / technical information IGBT-Module IFS75S12N3T4_B11 IGBT-Modules Schaltplan / circuit diagram Gehäuseabmessungen / package outline Infineon Infineon prepared by: US date of publication: 16.08.2011 approved by: MH revision: 2.1 Zieldaten Target Data 12(13) DB_IFS75S12N3T4_B11_2V1_2011-08-16 ...
Page 13
... If and to the extent necessary, please forward equivalent notices to your customers. Changes of this product data sheet are reserved. prepared by: US date of publication: 16.08.2011 approved by: MH revision: 2.1 Zieldaten Target Data 13(13) DB_IFS75S12N3T4_B11_2V1_2011-08-16 ...