MT9VDDF3272G-40B Micron Semiconductor Products, MT9VDDF3272G-40B Datasheet - Page 20

• Manufacturer Part Number: MT9VDDF3272G-40B
• Description: 256mb, 512mb X72, Ecc, Sr Pc3200 184-pin Ddr Rdimm
• Manufacturer: Micron Semiconductor Products

Table 11:
pdf: 09005aef80f6ab6a, source: 09005aef80f6ab23
DDAF9C32_64x72_2.fm - Rev. C 7/05 EN
Parameter/Condition
OPERATING CURRENT: One device bank; Active-Precharge;
t
Address and control inputs changing once every two clock cycles
OPERATING CURRENT: One device bank; Active -Read Precharge;
Burst = 4;
control inputs changing once per clock cycle
PRECHARGE POWER-DOWN STANDBY CURRENT: All device banks idle;
Power-down mode;
IDLE STANDBY CURRENT: CS# = HIGH; All device banks idle;
CKE = HIGH; Address and other control inputs changing once per clock
cycle. V
ACTIVE POWER-DOWN STANDBY CURRENT: One device bank active;
Power-down mode;
ACTIVE STANDBY CURRENT: CS# = HIGH; CKE = HIGH; One device bank;
Active-Precharge;
inputs changing twice per clock cycle; Address and other control inputs
changing once per clock cycle
OPERATING CURRENT: Burst = 2; Reads; Continuous burst; One bank
active; Address and control inputs changing once per clock cycle;
(MIN); I
OPERATING CURRENT: Burst = 2; Writes; Continuous burst; One device
bank active; Address and control inputs changing once per clock cycle;
=
AUTO REFRESH CURRENT
SELF REFRESH CURRENT: CKE ≤ 0.2V
OPERATING CURRENT: Four device bank interleaving READs (BL = 4) with
auto precharge,
inputs change only during Active READ, or WRITE commands
CK =
t
CK (MIN); DQ, DM, and DQS inputs changing twice per clock cycle
t
CK (MIN); DQ, DM and DQS inputs changing once per clock cyle;
IN
OUT
= V
t
RC =
= 0mA
REF
IDD Specifications and Conditions – 256MB
DDR SDRAM components only
Notes: 1–5, 8, 10, 12, 48; notes appear on pages 24–27; 0°C ≤ T
t
RC (MIN);
for DQ, DQS, and DM
t
RC =
t
RC =
t
t
CK =
CK =
t
RC (MIN);
t
RAS (MAX);
t
t
t
CK (MIN); CKE = (LOW)
CK (MIN); CKE = LOW
CK =
t
CK (MIN); I
t
CK =
t
CK =
t
CK (MIN); Address and control
256MB, 512MB: (x72, ECC, SR) PC3200 184-Pin DDR RDIMM
t
CK (MIN); DQ, DM andDQS
OUT
= 0mA; Address and
t
t
REFC =
REFC = 7.8125µs
t
RC =
t
20
CK =
t
t
RFC (MIN)
RC (MIN);
t
t
CK =
CK MIN;
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t
t
CK
CK
A
≤ +70°C; V
I
SYM
I
I
I
I
I
I
DD4W
I
I
DD3N
I
DD5A
I
I
DD2P
DD2F
DD3P
DD4R
DD 0
DD1
DD5
DD6
DD7
DD
Electrical Specifications
= V
1,215
1,530
1,800
1,755
2,340
4,230
Max
-40B
540
360
630
36
54
36
DD
©2003 Micron Technology, Inc. All rights reserved.
Q = +2.6V ±0.1V
Units
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
21, 28, 44
21, 28, 44
Notes
20, 42
20, 42
20, 42
20, 44
24, 44
20, 43
45
41
20
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