IPB06CN10NG Infineon Technologies, IPB06CN10NG Datasheet

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IPB06CN10NG

Manufacturer Part Number
IPB06CN10NG
Description
Power-Transistor
Manufacturer
Infineon Technologies
Datasheet
www.DataSheet4U.com
Rev. 1.05
Features
• N-channel, normal level
• Excellent gate charge x R
• Very low on-resistance R
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC
• Ideal for high-frequency switching and synchronous rectification
Maximum ratings, at T
Parameter
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
Reverse diode dv /dt
Gate source voltage
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
OptiMOS
Type
Package
Marking
®
2 Power-Transistor
IPB06CN10N G
PG-TO263-3
06CN10N
3)
4)
j
=25 °C, unless otherwise specified
DS(on)
DS(on)
1)
product (FOM)
for target application
Symbol Conditions
I
I
E
dv /dt
V
P
T
D
D,pulse
j
AS
GS
tot
, T
IPI06CN10N G
PG-TO262-3
06CN10N
stg
T
T
T
I
I
di /dt =100 A/µs,
T
T
D
D
C
C
C
j,max
C
=100 A, R
=100 A, V
page 1
=25 °C
=100 °C
=25 °C
=25 °C
=175 °C
2)
DS
GS
=80 V,
=25
Product Summary
V
R
I
IPP06CN10N G
PG-TO220-3
06CN10N
D
DS
DS(on),max (TO263)
IPB06CN10N G
-55 ... 175
55/175/56
Value
100
400
480
±20
214
88
6
IPP06CN10N G
IPI06CN10N G
100
100
6.2
2006-06-02
Unit
A
mJ
kV/µs
V
W
°C
V
m
A

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IPB06CN10NG Summary of contents

Page 1

OptiMOS ® 2 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R • Very low on-resistance R • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC • Ideal for ...

Page 2

Parameter Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient Electrical characteristics Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Gate resistance Transconductance ...

Page 3

Parameter Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Switching charge Gate charge total Gate plateau voltage ...

Page 4

Power dissipation P =f(T ) tot C 250 200 150 100 Safe operating area I =f =25 ° parameter ...

Page 5

Typ. output characteristics I =f =25 ° parameter 400 10 V 320 240 6 V 160 5 4 Typ. transfer characteristics ...

Page 6

Drain-source on-state resistance R =f =100 A; V DS(on -60 - Typ. capacitances C =f MHz ...

Page 7

Avalanche characteristics parameter: T j(start) 1000 100 150 ° Drain-source breakdown voltage V =f BR(DSS 115 110 105 100 ...

Page 8

PG-TO220-3: Outline Rev. 1.05 IPB06CN10N G page 8 IPI06CN10N G IPP06CN10N G 2006-06-02 ...

Page 9

Rev. 1.05 IPB06CN10N G page 9 IPI06CN10N G IPP06CN10N G 2006-06-02 ...

Page 10

PG-TO-263 (D²-Pak) Rev. 1.05 IPB06CN10N G page 10 IPI06CN10N G IPP06CN10N G 2006-06-02 ...

Page 11

... Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life ...

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