PTF181301 Infineon Technologies AG, PTF181301 Datasheet
PTF181301
Related parts for PTF181301
PTF181301 Summary of contents
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... LDMOS RF Power Field Effect Transistor 130 W, 1805–1880 MHz Description The PTF181301 is a 130 W, internally matched GOLDMOS FET intended for GSM and EDGE applications in the 1805 to 1880 MHz band. Full gold metallization ensures excellent device lifetime and reliability. EDGE EVM Performance EVM & ...
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... (BR)DSS 0 1 Symbol Developmental PTF181301 Min Typ Max 65 — — I — — 1.0 DSS — 0.07 — DS(on) V 2.5 3.2 4 — — 1.0 GSS Value 65 DSS V –0.5 to +12 ...
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... Pins drain source gate 4. Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001] Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/products Developmental Data Sheet Developmental PTF181301 Package Description Thermally enhanced, flange mount Package 20260 2X 12.70 [ ...
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... PTF181301 Revision History: 04-04-28 Previous Version: none Page Subjects (major changes since last revision) We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: highpowerRF@infineon ...