PTF181301 Infineon Technologies AG, PTF181301 Datasheet - Page 2

• Manufacturer Part Number: PTF181301
• Description: LDMOS RF Power Field Effect Transistor 130 W/ 1805-1880 MHz
• Manufacturer: Infineon Technologies AG

DC Characteristics
Characteristic
Drain–Source Breakdown Voltage
Drain Leakage Current
On–State Resistance
Operating Gate Voltage
Gate Leakage Current
Maximum Ratings
Parameter
Drain–Source Voltage
Gate–Source Voltage
Junction Temperature
Total Device Dissipation
Storage Temperature Range
Thermal Resistance (T
Developmental Data Sheet
Above 25°C derate by
CASE
at T
= 70°C, 130 W CW)
CASE
= 25°C unless otherwise indicated
Conditions
V
V
V
V
V
GS
DS
GS
DS
GS
= 28 V, V
= 28 V, I
= 10 V, V
= 0 V, I
= 10 V, V
DS
DQ
GS
DS
DS
= 10 µA
= 1.8 A
= 0.1 V
= 0 V
= 0 V
2 of 4
V
Symbol
Symbol
R
(BR)DSS
V
T
R
I
I
DS(on)
V
V
GSS
DSS
P
DSS
STG
T
GS
GS
D
J
JC
Developmental PTF181301
Min
2.5
65
—
—
—
–40 to +150
–0.5 to +12
Value
0.07
Typ
0.50
200
350
3.2
2.0
—
—
—
65
Max
1.0
4.0
1.0
—
—
2004-04-28
Unit
W/°C
°C/W
Unit
µA
µA
°C
°C
W
V
V
V
V