PTF181301 Infineon Technologies AG, PTF181301 Datasheet - Page 3
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PTF181301
Manufacturer Part Number
PTF181301
Description
LDMOS RF Power Field Effect Transistor 130 W/ 1805-1880 MHz
Manufacturer
Infineon Technologies AG
Datasheet
1.PTF181301.pdf
(4 pages)
Ordering Information
Type
PTF181301A
Package Outline Specifications
Find the latest and most complete information about products and packaging at the Infineon Internet page
http://www.infineon.com/products
Developmental Data Sheet
[.040]
1.02
LID 13.21
[.520
SPH 1.57
Notes: Unless otherwise specified
[.062]
(2X 4.83±0.50
[.190±.020])
Package Outline
+.004
-.006
+0.10
]
-0.15
45° X (2.03
20260
[.080])
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.
2. Primary dimensions are mm. Alternate dimensions are inches.
3. Pins: D = drain, S = source, G = gate
4. Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001]
[.020]
0.51
Package 20260
22.35±0.23
[.880±.009]
2X 12.70
[.500]
Package Description
Thermally enhanced, flange mount
27.94
[1.100]
[1.340]
34.04
3 of 4
D
G
S
Developmental PTF181301
2X 3.25
[.128]
[.162±.015]
4.11±0.38
2X 1.63
[.064] R
ERA-H-30260-2-1-2302
4X R 1.52
[.060]
0.038 [.0015] -A-
13.72
[.540]
[.920±.020]
23.37±0.51
Marking
PTF181301A
2004-04-28