si3456dv Fairchild Semiconductor, si3456dv Datasheet
si3456dv
Manufacturer Part Number
si3456dv
Description
N-channel Powertrench Mosfet
Manufacturer
Fairchild Semiconductor
Datasheet
1.SI3456DV.pdf
(5 pages)
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Si3456DV
N-Channel PowerTrench
General Description
These N-Channel Logic Level MOSFETs are produced
using Fairchild Semiconductor’s advanced Power
Trench process that has been especially tailored to
minimize the on-state resistance and yet maintain
superior switching performance.
These devices are well suited for low
battery powered applications where low in-line power
loss and fast switching are required.
Ó2002 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
Symbol
V
V
I
P
T
Thermal Characteristics
R
R
Package Marking and Ordering Information
D
J
DSS
GSS
D
qJA
qJC
, T
Device Marking
STG
.456
SuperSOT -6
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Maximum Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
D
D
TM
S
– Continuous
– Pulsed
Si3456DV
Device
D
Parameter
Ò
D
MOSFET
G
voltage and
T
A
=25
o
C unless otherwise noted
Reel Size
7’’
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1a)
(Note 1)
Features
· 5.1 A, 30 V.
· High performance trench technology for extremely
· Low gate charge
· High power and current handling capability
low R
DS(ON)
1
2
3
Tape width
R
R
DS(ON)
DS(ON)
–55 to +150
8mm
Ratings
±20
5.1
1.6
0.8
30
20
78
30
= 45 mW @ V
= 65 mW @ V
6
5
4
June 2002
GS
GS
3000 units
= 10 V
= 4.5 V
Quantity
Si3456DV Rev B
Units
°C/W
°C
W
V
V
A
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Datasheet:
si3456dv Summary of contents
Page 1
... C unless otherwise noted A (Note 1a) (Note 1a) (Note 1b) (Note 1a) (Note 1) Reel Size 7’’ June 2002 DS(ON 4.5 V DS(ON Ratings Units 30 V ± 1.6 W 0.8 °C –55 to +150 °C Tape width Quantity 8mm 3000 units Si3456DV Rev B ...
Page 2
... Min Typ Max Units mV/° ±100 –4 mV/° 463 pF 109 1.1 6 2.3 4 12.6 nC 1.4 nC 1.6 nC 1.3 A 0.77 1 Si3456DV Rev B ...
Page 3
... Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. = 3.0V 3.5V 4.0V 4.5V 6.0V 10V DRAIN CURRENT ( 2. 125 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125 -55 C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD Si3456DV Rev 1.2 ...
Page 4
... V , DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 156°C/W qJA T = 25°C A 0.01 0 100 t , TIME (sec) 1 Power Dissipation. qJA qJA R ( qJA R =156 °C/W P(pk qJA ( Duty Cycle 100 Si3456DV Rev B 30 1000 1000 ...
Page 5
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FASTr™ Bottomless™ FRFET™ GlobalOptoisolator™ CoolFET™ GTO™ CROSSVOLT™ HiSeC™ ...