si3456dv Fairchild Semiconductor, si3456dv Datasheet - Page 3

• Manufacturer Part Number: si3456dv
• Description: N-channel Powertrench Mosfet
• Manufacturer: Fairchild Semiconductor

Typical Characteristics
1.6
1.4
1.2
0.8
0.6
20
15
10
20
15
10
5
0
1
5
0
-50
Figure 1. On-Region Characteristics.
0
1
Figure 5. Transfer Characteristics.
Figure 3. On-Resistance Variation
V
GS
V
I
V
6.0V
= 10V
D
GS
-25
DS
= 5.1A
0.5
1.5
=10V
= 5V
V
withTemperature.
V
T
0
GS
DS
J
, JUNCTION TEMPERATURE (
, GATE TO SOURCE VOLTAGE (V)
1
, DRAIN-SOURCE VOLTAGE (V)
2
4.5V
25
1.5
2.5
50
T
A
2
3
= -55
3.5V
75
o
C
2.5
3.5
100
o
3.0V
125
C)
2.5V
o
C
3
4
125
25
o
C
3.5
4.5
150
Figure 6. Body Diode Forward Voltage Variation
0.0001
0.001
0.14
0.12
0.08
0.06
0.04
0.02
0.01
100
2.4
2.2
1.8
1.6
1.4
1.2
0.8
Figure 2. On-Resistance Variation with
0.1
Figure 4. On-Resistance Variation with
0.1
with Source Current and Temperature.
10
2
1
1
0
2
0
V
Drain Current and Gate Voltage.
T
GS
V
A
GS
= 0V
= 25
= 3.0V
Gate-to-Source Voltage.
o
0.2
C
V
SD
V
, BODY DIODE FORWARD VOLTAGE (V)
GS
5
4
T
, GATE TO SOURCE VOLTAGE (V)
A
3.5V
= 125
I
0.4
D
T
, DRAIN CURRENT (A)
A
4.0V
= 125
o
C
o
C
0.6
10
6
4.5V
25
o
C
0.8
6.0V
-55
15
8
o
C
I
D
1
10V
= 2.5A
Si3456DV Rev B
1.2
20
10