si3456dv Fairchild Semiconductor, si3456dv Datasheet - Page 2

• Manufacturer Part Number: si3456dv
• Description: N-channel Powertrench Mosfet
• Manufacturer: Fairchild Semiconductor

Notes:
1. R
2. Pulse Test: Pulse Width £ 300 ms, Duty Cycle £ 2.0%
Electrical Characteristics
Symbol
Off Characteristics
BV
DBV
I
I
On Characteristics
V
DV
R
I
g
Dynamic Characteristics
C
C
C
Switching Characteristics
t
t
t
t
Q
Q
Q
Drain–Source Diode Characteristics and Maximum Ratings
I
V
t
Q
R
a. 78°C/W when mounted on a 1in
b. 156°C/W when mounted on a minimum pad.
DSS
GSS
D(on)
d(on)
r
d(off)
f
S
rr
FS
GS(th)
SD
qJA
DS(on)
iss
oss
rss
DT
DT
g
gs
gd
rr
G
GS(th)
DSS
pins. R
is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the drain
DSS
J
J
qJC
is guaranteed by design while R
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
On–State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
Voltage
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
Parameter
2
pad of 2oz copper on FR-4 board.
(Note 2)
qCA
(Note 2)
is determined by the user's board design.
V
I
V
V
V
I
V
V
V
V
V
V
f = 1.0 MHz
V
V
V
V
V
V
I
d
T
D
D
F
iF
A
GS
DS
GS
DS
GS
GS
GS
GS
DS
DS
GS
DS
GS
DS
GS
GS
= 5.1A
= 250 mA, Referenced to 25°C
= 250 mA, Referenced to 25°C
/d
= 25°C unless otherwise noted
= 30 V,
= V
= 10 V,
= 15 V,
= 15 V,
= 15 V,
= 0 V,
= ±20 V,
= 10 V,
= 4.5 V,
= 10 V, I
= 10 V,
= 15 mV, f = 1.0 MHz
= 10 V,
= 10 V
= 0 V,
t
= 100 A/µs
Test Conditions
GS
,
D
I
S
= 5.1 A, T
= 1.3 A
I
V
I
I
I
V
I
V
I
R
I
D
D
D
D
D
D
D
DS
DS
GEN
GS
= 250 mA
= 250 mA
= 5.1 A
= 4.3 A
= 5.1 A
= 1 A,
= 5.1 A,
V
T
= 0 V
= 5 V
J
GS
= 0 V,
=70°C
= 6 W
= 0 V
J
=125°C
(Note 2)
(Note 2)
Min Typ
30
15
1
0.77
463
109
1.5
1.1
6.3
2.3
1.4
1.6
25
–4
33
44
49
12
44
20
18
17
6
9
Max Units
±100
12.6
4.6
1.3
1.2
45
65
71
13
12
36
1
5
2
Si3456DV Rev B
mV/°C
mV/°
mW
nC
nC
nC
nC
mA
nA
pF
pF
pF
nS
nS
nS
nS
nS
W
V
V
A
S
A
V