nt2gc72b89g0nf Nanya Techology, nt2gc72b89g0nf Datasheet

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nt2gc72b89g0nf

Manufacturer Part Number
nt2gc72b89g0nf
Description
Pc3-10600 / Pc-12800 Unbuffered Ddr3 Sdram Dimm With Ecc
Manufacturer
Nanya Techology
Datasheet
NT2GC72B89G0NF / NT4GC72B8PG0NF
NT2GC72C89G0NF / NT4GC72C8PG0NF
2GB: 256M x 72 / 4GB: 512M x 72
PC3-10600 / PC-12800
Unbuffered DDR3 SDRAM DIMM with ECC
Based on DDR3-1066/1333/1600 256Mx8 SDRAM G-Die
Features
•Performance:
DIMM CAS Latency
fck – Clock Frequency
tck – Clock Cycle
fDQ – DQ Burst Frequency
• 240-Pin Dual In-Line Memory Module (UDIMM)
• 256Mx72 and 512Mx72 DDR3 Unbuffered DIMM with ECC based
• Intended for 667MHz/800MHz applications
•V
•V
• SDRAMs have 8 internal banks for concurrent operation
• Differential clock inputs
• Data is read or written on both clock edges
• DRAM DLL aligns DQ and DQS transitions with clock transitions.
• Address and control signals are fully synchronous to positive
• Nominal and Dynamic On-Die Termination support
Description
NT2GC72B89G0NF / NT4GC72B8PG0NF / NT2GC72C89G0NF and NT4GC72C8PG0NF are 240-Pin Double Data Rate 3 (DDR3)
Synchronous DRAM Unbuffered Dual In-Line Memory Module with ECC (UDIMM w/ ECC), organized as one rank of 256Mx72 (2GB) and
two ranks of 512Mx72 (4GB) high-speed memory array. Modules use nine 256Mx8 (2GB) 78-ball BGA packaged devices and eighteen
256Mx8 (4GB) 78-ball BGA packaged devices. These DIMMs are manufactured using raw cards developed for broad industry use as
reference designs. The use of these common design files minimizes electrical variation between suppliers. All NANYA DDR3 SDRAM
DIMMs provide a high-performance, flexible 8-byte interface in a 5.25” long space-saving footprint.
The DIMM is intended for use in applications operating of 667MHz/800MHz clock speeds and achieves high-speed data transfer rates of
1333Mbps/1600Mbps. Prior to any access operation, the device  latency and burst/length/operation type must be programmed into the
DIMM by address inputs A0-A14 and I/O inputs BA0~BA2 using the mode register set cycle.
The DIMM uses serial presence-detect implemented via a serial EEPROM using a standard IIC protocol. The first 128 bytes of SPD data
are programmed and locked during module assembly. The remaining 128 bytes are available for use by the customer.
REV 0.1
03/2011
on 256Mx8 DDR3 SDRAM G-Die devices.
DD
DD
clock edge
= V
= V
Speed Sort
DDQ
DDQ
= 1.5V ± 0.075V (for DDR3)
= 1.35V -0.0675/+0.1V (for DDR3L)
PC3-10600
1333
-CG
667
1.5
9
PC3-12800
1600
1.25
800
-DI
11
Mbps
MHz
Unit
ns
1
• Programmable Operation:
• Two different termination values (Rtt_Nom & Rtt_WR)
• 15/10/1 (row/column/rank) Addressing for 2GB
• 15/10/2 (row/column/rank) Addressing for 4GB
• Extended operating temperature rage
• Auto Self-Refresh option
• Serial Presence Detect
• Gold contacts
• SDRAMs are in 78-ball BGA Package
• RoHS compliance and Halogen free
- DIMM  Latency: 5,6,7,8,9,10,11
- Burst Type: Sequential or Interleave
- Burst Length: BC4, BL8
- Operation: Burst Read and Write
NANYA reserves the right to change products and specifications without notice.
© NANYA TECHNOLOGY CORPORATION

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nt2gc72b89g0nf Summary of contents

Page 1

... Nominal and Dynamic On-Die Termination support Description NT2GC72B89G0NF / NT4GC72B8PG0NF / NT2GC72C89G0NF and NT4GC72C8PG0NF are 240-Pin Double Data Rate 3 (DDR3) Synchronous DRAM Unbuffered Dual In-Line Memory Module with ECC (UDIMM w/ ECC), organized as one rank of 256Mx72 (2GB) and two ranks of 512Mx72 (4GB) high-speed memory array. Modules use nine 256Mx8 (2GB) 78-ball BGA packaged devices and eighteen 256Mx8 (4GB) 78-ball BGA packaged devices ...

Page 2

... NT2GC72B89G0NF / NT4GC72B8PG0NF NT2GC72C89G0NF / NT4GC72C8PG0NF 2GB: 256M 4GB: 512M x 72 PC3-10600 / PC-12800 Unbuffered DDR3 SDRAM DIMM with ECC Ordering Information Part Number NT2GC72B89G0NF-CG DDR3-1333 NT2GC72B89G0NF-DI DDR3-1600 NT4GC72B8PG0NF-CG DDR3-1333 NT4GC72B8PG0NF-DI DDR3-1600 NT2GC72C89G0NF-CG DDR3-1333 NT4GC72C8PG0NF-CG DDR3-1333 Pin Description Pin Name Description CK0, CK1 Clock Inputs, positive line  ...

Page 3

... NT2GC72B89G0NF / NT4GC72B8PG0NF NT2GC72C89G0NF / NT4GC72C8PG0NF 2GB: 256M 4GB: 512M x 72 PC3-10600 / PC-12800 Unbuffered DDR3 SDRAM DIMM with ECC DDR3 SDRAM Pin Assignment Pin Front Pin Back Pin 1 V 121 V 31 REFDQ 122 DQ4 DQ0 123 DQ5 33 4 DQ1 124 ...

Page 4

... NT2GC72B89G0NF / NT4GC72B8PG0NF NT2GC72C89G0NF / NT4GC72C8PG0NF 2GB: 256M 4GB: 512M x 72 PC3-10600 / PC-12800 Unbuffered DDR3 SDRAM DIMM with ECC Input/Output Functional Description Symbol Type Polarity CK0, CK1 Cross Input ,  point Active CKE0, CKE1 Input High Active  ...

Page 5

... NT2GC72B89G0NF / NT4GC72B8PG0NF NT2GC72C89G0NF / NT4GC72C8PG0NF 2GB: 256M 4GB: 512M x 72 PC3-10600 / PC-12800 Unbuffered DDR3 SDRAM DIMM with ECC Functional Block Diagram – [2GB 1 Rank, 256Mx8 DDR3 SDRAMs]   DQS0 DM0  DM DQ0 I/O 0 DQ1 I/O 1 DQ2 I/O 2 DQ3 ...

Page 6

... NT2GC72B89G0NF / NT4GC72B8PG0NF NT2GC72C89G0NF / NT4GC72C8PG0NF 2GB: 256M 4GB: 512M x 72 PC3-10600 / PC-12800 Unbuffered DDR3 SDRAM DIMM with ECC Functional Block Diagram – [4GB 2 Ranks, 256Mx8 DDR3 SDRAMs]   DQS0 DQS0 DM0 DM CS DQS DQS DQ0 I/O 0 DQ1 I/O 1 DQ2 I/O 2 I/O 3 DQ3 ...

Page 7

... NT2GC72B89G0NF / NT4GC72B8PG0NF NT2GC72C89G0NF / NT4GC72C8PG0NF 2GB: 256M 4GB: 512M x 72 PC3-10600 / PC-12800 Unbuffered DDR3 SDRAM DIMM with ECC Environmental Requirements Symbol Operating Humidity (relative) H OPR Storage Temperature (Plastic) T STG Storage Humidity (without condensation) H STG Barometric Pressure (operating & storage) P BAR Note: 1 ...

Page 8

... NT2GC72B89G0NF / NT4GC72B8PG0NF NT2GC72C89G0NF / NT4GC72C8PG0NF 2GB: 256M 4GB: 512M x 72 PC3-10600 / PC-12800 Unbuffered DDR3 SDRAM DIMM with ECC DC Electrical Characteristics and Operating Conditions Symbol Parameter V Supply Voltage DD V Output Supply Voltage DDQ V Supply Voltage DD V Output Supply Voltage DDQ Note: 1. Under all conditions VDDQ must be less than or equal to VDD. ...

Page 9

... NT2GC72B89G0NF / NT4GC72B8PG0NF NT2GC72C89G0NF / NT4GC72C8PG0NF 2GB: 256M 4GB: 512M x 72 PC3-10600 / PC-12800 Unbuffered DDR3 SDRAM DIMM with ECC Operating, Standby, and Refresh Currents = 1.5V ± 0.075V [2GB – 1 Rank, 256Mx8 DDR3 SDRAMs ° ° CASE DDQ DD Symbol Operating One Bank Active-Precharge Current ...

Page 10

... NT2GC72B89G0NF / NT4GC72B8PG0NF NT2GC72C89G0NF / NT4GC72C8PG0NF 2GB: 256M 4GB: 512M x 72 PC3-10600 / PC-12800 Unbuffered DDR3 SDRAM DIMM with ECC = 1.5V ± 0.075V [4GB – 2 Ranks, 256Mx8 DDR3 SDRAMs ° ° CASE DDQ DD Symbol Operating One Bank Active-Precharge Current IDD0 Operating One Bank Active-Read-Precharge Current ...

Page 11

... NT2GC72B89G0NF / NT4GC72B8PG0NF NT2GC72C89G0NF / NT4GC72C8PG0NF 2GB: 256M 4GB: 512M x 72 PC3-10600 / PC-12800 Unbuffered DDR3 SDRAM DIMM with ECC Standard Speed Bins DDR3-1066MHz Speed Bin CL-nRCD-nRP Parameter Internal read command to first data ACT to internal read or write delay time PRE command period ACT to ACT or REF command period ...

Page 12

... NT2GC72B89G0NF / NT4GC72B8PG0NF NT2GC72C89G0NF / NT4GC72C8PG0NF 2GB: 256M 4GB: 512M x 72 PC3-10600 / PC-12800 Unbuffered DDR3 SDRAM DIMM with ECC DDR3-1600MHz Speed Bin CL-nRCD-nRP Parameter Internal read command to first data ACT to internal read or write delay time PRE command period ACT to ACT or REF command period ...

Page 13

... NT2GC72B89G0NF / NT4GC72B8PG0NF NT2GC72C89G0NF / NT4GC72C8PG0NF 2GB: 256M 4GB: 512M x 72 PC3-10600 / PC-12800 Unbuffered DDR3 SDRAM DIMM with ECC AC Timing Specifications for DDR3 SDRAM Devices Used on Module (1066MHz) Parameter Clock Timing Minimum Clock Cycle Time (DLL off mode) Average Clock Period Average high pulse width ...

Page 14

... NT2GC72B89G0NF / NT4GC72B8PG0NF NT2GC72C89G0NF / NT4GC72C8PG0NF 2GB: 256M 4GB: 512M x 72 PC3-10600 / PC-12800 Unbuffered DDR3 SDRAM DIMM with ECC Command and Address Timing DLL locking time Internal READ Command to PRECHARGE Command delay Delay from start of internal write transaction to internal read command WRITE recovery time ...

Page 15

... NT2GC72B89G0NF / NT4GC72B8PG0NF NT2GC72C89G0NF / NT4GC72C8PG0NF 2GB: 256M 4GB: 512M x 72 PC3-10600 / PC-12800 Unbuffered DDR3 SDRAM DIMM with ECC Timing of PRE or PREA command to Power Down entry Timing of RD/RDA command to Power Down entry Timing of WR command to Power Down entry (BL8OTF, BL8MRS, BC4OTF) Timing of WRA command to Power Down entry ...

Page 16

... NT2GC72B89G0NF / NT4GC72B8PG0NF NT2GC72C89G0NF / NT4GC72C8PG0NF 2GB: 256M 4GB: 512M x 72 PC3-10600 / PC-12800 Unbuffered DDR3 SDRAM DIMM with ECC AC Timing Specifications for DDR3 SDRAM Devices Used on Module (1333MHz) Parameter Clock Timing Minimum Clock Cycle Time (DLL off mode) Average Clock Period Average high pulse width ...

Page 17

... NT2GC72B89G0NF / NT4GC72B8PG0NF NT2GC72C89G0NF / NT4GC72C8PG0NF 2GB: 256M 4GB: 512M x 72 PC3-10600 / PC-12800 Unbuffered DDR3 SDRAM DIMM with ECC Command and Address Timing DLL locking time Internal READ Command to PRECHARGE Command delay Delay from start of internal write transaction to internal read command WRITE recovery time ...

Page 18

... NT2GC72B89G0NF / NT4GC72B8PG0NF NT2GC72C89G0NF / NT4GC72C8PG0NF 2GB: 256M 4GB: 512M x 72 PC3-10600 / PC-12800 Unbuffered DDR3 SDRAM DIMM with ECC Timing of PRE or PREA command to Power Down entry Timing of RD/RDA command to Power Down entry Timing of WR command to Power Down entry (BL8OTF, BL8MRS, BC4OTF) Timing of WRA command to Power Down entry ...

Page 19

... NT2GC72B89G0NF / NT4GC72B8PG0NF NT2GC72C89G0NF / NT4GC72C8PG0NF 2GB: 256M 4GB: 512M x 72 PC3-10600 / PC-12800 Unbuffered DDR3 SDRAM DIMM with ECC AC Timing Specifications for DDR3 SDRAM Devices Used on Module (1600MHz) Parameter Clock Timing Minimum Clock Cycle Time (DLL off mode) Average Clock Period Average high pulse width ...

Page 20

... NT2GC72B89G0NF / NT4GC72B8PG0NF NT2GC72C89G0NF / NT4GC72C8PG0NF 2GB: 256M 4GB: 512M x 72 PC3-10600 / PC-12800 Unbuffered DDR3 SDRAM DIMM with ECC Command and Address Timing DLL locking time Internal READ Command to PRECHARGE Command delay Delay from start of internal write transaction to internal read command WRITE recovery time ...

Page 21

... NT2GC72B89G0NF / NT4GC72B8PG0NF NT2GC72C89G0NF / NT4GC72C8PG0NF 2GB: 256M 4GB: 512M x 72 PC3-10600 / PC-12800 Unbuffered DDR3 SDRAM DIMM with ECC Timing of PRE or PREA command to Power Down entry Timing of RD/RDA command to Power Down entry Timing of WR command to Power Down entry (BL8OTF, BL8MRS, BC4OTF) Timing of WRA command to Power Down entry ...

Page 22

... NT2GC72B89G0NF / NT4GC72B8PG0NF NT2GC72C89G0NF / NT4GC72C8PG0NF 2GB: 256M 4GB: 512M x 72 PC3-10600 / PC-12800 Unbuffered DDR3 SDRAM DIMM with ECC Package Dimensions [2GB – 1 Rank, 256Mx8 DDR3 SDRAMs] 5.175 47.00 Detail A 2.50 1.50 +/- 0.10 Units: Millimeters Note: Device position and scale are only for reference. REV 0.1 03/2011 FRONT 133 ...

Page 23

... NT2GC72B89G0NF / NT4GC72B8PG0NF NT2GC72C89G0NF / NT4GC72C8PG0NF 2GB: 256M 4GB: 512M x 72 PC3-10600 / PC-12800 Unbuffered DDR3 SDRAM DIMM with ECC Package Dimensions [4GB – 2 Ranks, 256Mx8 DDR3 SDRAMs] 5.175 47.00 Detail A 2.50 1.50 +/- 0.10 Units: Millimeters Note: Device position and scale are only for reference. REV 0.1 03/2011 FRONT 133 ...

Page 24

... NT2GC72B89G0NF / NT4GC72B8PG0NF NT2GC72C89G0NF / NT4GC72C8PG0NF 2GB: 256M 4GB: 512M x 72 PC3-10600 / PC-12800 Unbuffered DDR3 SDRAM DIMM with ECC Revision Log Rev Date 0.1 03/2011 Preliminary Release 1.0 05/2011 Official Release Nanya Technology Corporation Hwa Ya Technology Park 669 Fu Hsing 3rd Rd., Kueishan, Taoyuan, 333, Taiwan, R.O.C. ...

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