nt2gc64b88g0ns Nanya Techology, nt2gc64b88g0ns Datasheet
nt2gc64b88g0ns
Related parts for nt2gc64b88g0ns
nt2gc64b88g0ns Summary of contents
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... Serial Presence Detect Description NT2GC64B88G0NS / NT4GC64B8HG0NS are unbuffered 204-Pin Double Data Rate 3 (DDR3) Synchronous DRAM Small Outline Dual In-Line Memory Module (SO-DIMM), organized as two ranks of 256Mx64 (2GB) and 512Mx64 (4GB) high-speed memory array. Modules use eight 256Mx8 (2GB) 78-ball BGA packaged devices and sixteen 256Mx8 (4GB) 78-ball BGA packaged devices. These DIMMs are manufactured using raw cards developed for broad industry use as reference designs ...
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... NT2GC64B88G0NS / NT4GC64B8HG0NS 2GB: 256M 4GB: 512M x 64 PC3-10600 / PC3-12800 Unbuffered DDR3 SO-DIMM Ordering Information Part Number NT2GC64B88G0NS-CG DDR3-1333 PC3-10600 667MHz (1.500ns @ NT2GC64B88G0NS-DI DDR3-1600 PC3-12800 800MHz (1.250ns @ CL = 11) NT4GC64B8HG0NS-CG DDR3-1333 PC3-10600 667MHz (1.500ns @ NT4GC64B8HG0NS-DI DDR3-1600 PC3-12800 800MHz (1.250ns @ CL = 11) ...
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... NT2GC64B88G0NS / NT4GC64B8HG0NS 2GB: 256M 4GB: 512M x 64 PC3-10600 / PC3-12800 Unbuffered DDR3 SO-DIMM DDR3 SDRAM Pin Assignment Pin Front Pin Back Pin REFDQ DQ4 DQ0 6 DQ5 57 7 DQ1 ...
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... NT2GC64B88G0NS / NT4GC64B8HG0NS 2GB: 256M 4GB: 512M x 64 PC3-10600 / PC3-12800 Unbuffered DDR3 SO-DIMM Input/Output Functional Description Symbol Type Polarity CK0, CK1 Cross Input , point Active CKE0, CKE1 Input High Active , Input ...
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... NT2GC64B88G0NS / NT4GC64B8HG0NS 2GB: 256M 4GB: 512M x 64 PC3-10600 / PC3-12800 Unbuffered DDR3 SO-DIMM Functional Block Diagram – [2GB 1 Rank, 256Mx8 DDR3 SDRAMs] DQS0 DM0 DM DQS DQ0 I/O 0 DQ1 I/O 1 DQ2 I/O 2 DQ3 I/O 3 DQ4 I/O 4 DQ5 I/O 5 DQ6 I/O 6 DQ7 I/O 7 ...
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... NT2GC64B88G0NS / NT4GC64B8HG0NS 2GB: 256M 4GB: 512M x 64 PC3-10600 / PC3-12800 Unbuffered DDR3 SO-DIMM Functional Block Diagram – [4GB 2 Ranks, 256Mx8 DDR3 SDRAMs] 240ohm +/-1% DQS3 DQS ZQ DM3 DM DQ[24:31] DQ[0:7] D11 240ohm +/-1% DQS1 DQS ZQ ...
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... NT2GC64B88G0NS / NT4GC64B8HG0NS 2GB: 256M 4GB: 512M x 64 PC3-10600 / PC3-12800 Unbuffered DDR3 SO-DIMM Environmental Requirements Symbol Operating Temperature (ambient) T OPR Storage Temperature T STG Note: Stress greater than those listed may cause permanent damage to the device. This is a stress rating only, and device functional operation at or above the conditions indicated is not implied ...
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... NT2GC64B88G0NS / NT4GC64B8HG0NS 2GB: 256M 4GB: 512M x 64 PC3-10600 / PC3-12800 Unbuffered DDR3 SO-DIMM Single-Ended AC and DC Input Levels for Command and Address Symbol Parameter VIH.CA(DC) DC Input Logic High Vref + 0.100 VIL.CA(DC) DC Input Logic Low VIH.CA(AC) AC Input Logic High Vref + 0.175 VIL.CA(AC) AC Input Logic Low VIH ...
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... NT2GC64B88G0NS / NT4GC64B8HG0NS 2GB: 256M 4GB: 512M x 64 PC3-10600 / PC3-12800 Unbuffered DDR3 SO-DIMM Operating, Standby, and Refresh Currents = 1.5V ± 0.075V [2GB – 1 Rank, 256Mx8 DDR3 SDRAMs ° ° CASE DDQ DD Symbol Operating One Bank Active-Precharge Current IDD0 Operating One Bank Active-Read-Precharge Current ...
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... NT2GC64B88G0NS / NT4GC64B8HG0NS 2GB: 256M 4GB: 512M x 64 PC3-10600 / PC3-12800 Unbuffered DDR3 SO-DIMM Standard Speed Bins DDR3-1066MHz Speed Bin CL-nRCD-nRP Parameter Internal read command to first data ACT to internal read or write delay time PRE command period ACT to ACT or REF command period ACT to PRE command period ...
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... NT2GC64B88G0NS / NT4GC64B8HG0NS 2GB: 256M 4GB: 512M x 64 PC3-10600 / PC3-12800 Unbuffered DDR3 SO-DIMM DDR3-1600MHz Speed Bin CL-nRCD-nRP Parameter Internal read command to first data ACT to internal read or write delay time PRE command period ACT to ACT or REF command period ACT to PRE command period ...
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... NT2GC64B88G0NS / NT4GC64B8HG0NS 2GB: 256M 4GB: 512M x 64 PC3-10600 / PC3-12800 Unbuffered DDR3 SO-DIMM AC Timing Specifications for DDR3 SDRAM Devices Used on Module (1066MHz) Parameter Clock Timing Minimum Clock Cycle Time (DLL off mode) Average Clock Period Average high pulse width Average low pulse width ...
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... NT2GC64B88G0NS / NT4GC64B8HG0NS 2GB: 256M 4GB: 512M x 64 PC3-10600 / PC3-12800 Unbuffered DDR3 SO-DIMM Command and Address Timing DLL locking time Internal READ Command to PRECHARGE Command delay Delay from start of internal write transaction to internal read command WRITE recovery time Mode Register Set command cycle time ...
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... NT2GC64B88G0NS / NT4GC64B8HG0NS 2GB: 256M 4GB: 512M x 64 PC3-10600 / PC3-12800 Unbuffered DDR3 SO-DIMM Timing of RD/RDA command to Power Down entry Timing of WR command to Power Down entry (BL8OTF, BL8MRS, BC4OTF) Timing of WRA command to Power Down entry (BL8OTF, BL8MRS, BC4OTF) Timing of WR command to Power Down entry (BC4MRS) ...
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... NT2GC64B88G0NS / NT4GC64B8HG0NS 2GB: 256M 4GB: 512M x 64 PC3-10600 / PC3-12800 Unbuffered DDR3 SO-DIMM AC Timing Specifications for DDR3 SDRAM Devices Used on Module (1333MHz) Parameter Clock Timing Minimum Clock Cycle Time (DLL off mode) Average Clock Period Average high pulse width Average low pulse width ...
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... NT2GC64B88G0NS / NT4GC64B8HG0NS 2GB: 256M 4GB: 512M x 64 PC3-10600 / PC3-12800 Unbuffered DDR3 SO-DIMM Internal READ Command to PRECHARGE Command delay Delay from start of internal write transaction to internal read command WRITE recovery time Mode Register Set command cycle time Mode Register Set command update delay ...
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... NT2GC64B88G0NS / NT4GC64B8HG0NS 2GB: 256M 4GB: 512M x 64 PC3-10600 / PC3-12800 Unbuffered DDR3 SO-DIMM Timing of RD/RDA command to Power Down entry Timing of WR command to Power Down entry (BL8OTF, BL8MRS, BC4OTF) Timing of WRA command to Power Down entry (BL8OTF, BL8MRS, BC4OTF) Timing of WR command to Power Down entry (BC4MRS) ...
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... NT2GC64B88G0NS / NT4GC64B8HG0NS 2GB: 256M 4GB: 512M x 64 PC3-10600 / PC3-12800 Unbuffered DDR3 SO-DIMM AC Timing Specifications for DDR3 SDRAM Devices Used on Module (1600MHz) Parameter Clock Timing Minimum Clock Cycle Time (DLL off mode) Average Clock Period Average high pulse width Average low pulse width ...
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... NT2GC64B88G0NS / NT4GC64B8HG0NS 2GB: 256M 4GB: 512M x 64 PC3-10600 / PC3-12800 Unbuffered DDR3 SO-DIMM Internal READ Command to PRECHARGE Command delay Delay from start of internal write transaction to internal read command WRITE recovery time Mode Register Set command cycle time Mode Register Set command update delay ...
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... NT2GC64B88G0NS / NT4GC64B8HG0NS 2GB: 256M 4GB: 512M x 64 PC3-10600 / PC3-12800 Unbuffered DDR3 SO-DIMM Timing of RD/RDA command to Power Down entry Timing of WR command to Power Down entry (BL8OTF, BL8MRS, BC4OTF) Timing of WRA command to Power Down entry (BL8OTF, BL8MRS, BC4OTF) Timing of WR command to Power Down entry (BC4MRS) ...
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... NT2GC64B88G0NS / NT4GC64B8HG0NS 2GB: 256M 4GB: 512M x 64 PC3-10600 / PC3-12800 Unbuffered DDR3 SO-DIMM Package Dimensions – [2GB 1 Rank, 256Mx8 DDR3 SDRAMs] 2.0 (0.079) 1 21.0 (0.827) (0.053) 1.65 (0.059) Detail A Units: Millimeters (Inches) Note: Device position and scale are only for reference. REV 1.0 05/2011 67.60 +/- 0.15 (2 ...
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... NT2GC64B88G0NS / NT4GC64B8HG0NS 2GB: 256M 4GB: 512M x 64 PC3-10600 / PC3-12800 Unbuffered DDR3 SO-DIMM Package Dimensions – [4GB 2 Ranks, 256Mx8 DDR3 SDRAMs] 2.0 (0.079) 1 21.0 (0.827) 1.35 (0.053) 1.65 (0.059) Detail A Units: Millimeters (Inches) Note: Device position and scale are only for reference. REV 1.0 05/2011 67.60 +/- 0.15 (2 ...
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... NT2GC64B88G0NS / NT4GC64B8HG0NS 2GB: 256M 4GB: 512M x 64 PC3-10600 / PC3-12800 Unbuffered DDR3 SO-DIMM Revision Log Rev Date 0.1 04/2011 Preliminary Release 1.0 05/2011 Official Release REV 1.0 05/2011 Modification 23 © NANYA TECHNOLOGY CORPORATION NANYA reserves the right to change products and specifications without notice. ...