hyb18t512160afl-3.7 Infineon Technologies Corporation, hyb18t512160afl-3.7 Datasheet - Page 116

• Manufacturer Part Number: hyb18t512160afl-3.7
• Description: 512-mbit Ddr2 Sdram
• Manufacturer: Infineon Technologies Corporation

10
Table 62
Example for
DDR2 DRAM
Table 63
Field
1
2
3
4
5+6
7
8
9
10
11
Data Sheet
Product Namenclature
Nomenclature Fields and Examples
DDR2 Memory Components
Description
INFINEON Component Prefix
Interface Voltage [V]
DRAM Technology
Component Density [Mbit]
Number of I/Os
Product Variations
Die Revision
Package, Lead-Free Status
Power
Speed Grade
N/A for Components
1
Field Number
HYB
2
18
3
T
4
512
5
16
117
160
Values
HYB
18
T
256
512
1G
40
80
0 .. 9
A
B
C
F
L
–3
–3S
–3.7
–5
HYB18T512[40/80/16]0AF(L)–[3/3S/3.7/5]
6
7
0
Coding
Constant
SSTL1.8
DDR2
256 M
512 M
1 Gb
×4
×8
×16
look up table
First
Second
FBGA, lead-containing
FBGA, lead-free
low power product
DDR2–667 4–4–4
DDR2–667 5–5–5
DDR2–533 4–4–4
DDR2–400 3–3–3
8
A
512-Mbit DDR2 SDRAM
9
C
Product Namenclature
09112003-SDM9-IQ3P
Rev. 1.6, 2005-08
10
–3.7
11