hyb18t512160afl-3.7 Infineon Technologies Corporation, hyb18t512160afl-3.7 Datasheet - Page 50

• Manufacturer Part Number: hyb18t512160afl-3.7
• Description: 512-mbit Ddr2 Sdram
• Manufacturer: Infineon Technologies Corporation

Figure 26
RL = 3 (AL = 0, CL = 3, BL = 8)
Figure 27
RL = 5, WL = (RL-1) = 4, BL = 4
The minimum time from the read command to the write command is defined by a read-to-write turn-around time,
which is BL/2 + 2 clocks.
Data Sheet
C M D
C K , C K
D Q S ,
D Q S
D Q
C K , C K
CMD
DQ's
D Q S ,
D Q S
P o ste d C A S
R E A D A
R E A D A
T0
T0
Read Operation Example 2
Read followed by Write Example
C L = 3
R L = 3
T1
T1
N O P
N O P
BL/2 + 2
RL = 5
T2
T3
N O P
N O P
P o ste d C A S
W R IT E A
T3
T4
N O P
Dout A0
< = tD Q S C K
Dout A1
T4
51
T5
N O P
N O P
Dout A0
WL = RL - 1 = 4
Dout A2
HYB18T512[40/80/16]0AF(L)–[3/3S/3.7/5]
Dout A1
Dout A3
T5
T6
N O P
N O P
Dout A2
Dout A4
Dout A3
Dout A5
T6
T7
N O P
N O P
Dout A6
512-Mbit DDR2 SDRAM
Dout A7
Din A0
T7
T8
Functional Description
N O P
N O P
09112003-SDM9-IQ3P
Din A1
Rev. 1.6, 2005-08
Din A2
T9
T8
BRead303
N O P
N O P
BRBW514
Din A3