hyb18t512160afl-3.7 Infineon Technologies Corporation, hyb18t512160afl-3.7 Datasheet - Page 19

• Manufacturer Part Number: hyb18t512160afl-3.7
• Description: 512-mbit Ddr2 Sdram
• Manufacturer: Infineon Technologies Corporation

2.1
Figure 1
Notes
1.
Data Sheet
V
V
V
DDL
DDL
SSDL
and
is connected to
,
V
SS
TFBGA Ball Out Diagrams
Pin Configuration for ×4 components, PG-TFBGA-60 (top view)
V
, and
SSDL
are power and ground for the DLL.
V
SSQ
V
are isolated on the device.
DD
on the device.
V
DD
,
V
DDQ
,
20
2. Ball position L8 is A13 for 512-Mbit and is Not
HYB18T512[40/80/16]0AF(L)–[3/3S/3.7/5]
Connected on 256-Mbit
Pin Configuration and Block Diagrams
512-Mbit DDR2 SDRAM
09112003-SDM9-IQ3P
Rev. 1.6, 2005-08