m24l48512d Elite Semiconductor Memory Technology Inc., m24l48512d Datasheet - Page 3

• Manufacturer Part Number: m24l48512d
• Description: 4-mbit 512k X 8 Pseudo Static Ram
• Manufacturer: Elite Semiconductor Memory Technology Inc.

ESMT
Maximum Ratings
(Above which the useful life may be impaired. For user
guide-lines, not tested.)
Storage Temperature .................................–65°C to +150°C
Ambient Temperature with
Power Applied ..............................................–40°C to +85°C
Supply Voltage to Ground Potential ................−0.4V to 4.6V
DC Voltage Applied to Outputs
in High-Z State[3, 4, 5] .......................................−0.4V to 3.7V
DC Input Voltage[3, 4, 5] ....................................−0.4V to 3.7V
Output Current into Outputs (LOW) ............................20 mA
Static Discharge Voltage ......................................... > 2001V
(per MIL-STD-883, Method 3015)
Electrical Characteristics (Over the Operating Range)
V
V
V
V
V
I
I
I
I
I
Capacitance[6]
C
C
Notes:
3.V
4.V
5.Overshoot and undershoot specifications are characterized and are not 100% tested.
6.Tested initially and after design or process changes that may affect these parameters.
Elite Semiconductor Memory Technology Inc.
Parameter
IX
OZ
CC
SB1
SB2
CC
OH
OL
IH
IL
IN
OUT
IH(MAX)
IL(MIN)
Parameter
= –0.5V for pulse durations less than 20 ns.
= V
CC
Supply Voltage
Output HIGH
Voltage
Output LOW
Voltage
Input HIGH
Voltage
Input LOW
Voltage
Input Leakage
Current
Output Leakage
Current
V
Supply Current
Automatic
Power-down
Current —CMOS
Inputs
Automatic
Power-down
Current —CMOS
Inputs
+ 0.5V for pulse durations less than 20 ns.
CC
Description
Operating
CE
CE
Input Capacitance
Output Capacitance
1
1
Description
I
I
GND ≤ V
GND ≤ V
Disabled
f = f
f = 1 MHz
0.2V, V
0.2V, f = f
Only),
f = 0
0.2V, V
CE
CE
≤ 0.2V, f = 0, V
OH
OL
= 0.1 mA
1
1
= −0.1 mA
MAX
≥ V
≥ V
IN
IN
= 1/t
Test Conditions
MAX
≥ V
≥ V
CC
CC
IN
OUT
RC
(Address and Data
− 0.2V, CE2 ≤
− 0.2V, CE2 ≤
≤ Vcc
CC
CC
≤ Vcc, Output
CC
− 0.2V, V
− 0.2V or V
V
I
CMOS level
= 3.6V
OUT
CC
T
V
A
CC
= 3.6V,
= 0 mA,
= 25°C, f = 1 MHz
= V
IN
Test Conditions
CC(typ)
IN
≤
Latch-up Current ....................................................> 200 mA
Operating Range
Range
Extended
Industrial
V
0.8 * V
CC
Min.
-0.4
2.7
-1
-1
– 0.4
CC
Ambient Temperature (T
−25°C to +85°C
−40°C to +85°C
14 for 60 ns speed
14 for 55ns speed
1 for all speed
8 for 70 ns speed
Typ.[2]
-55, 60, 70
150
3.0
17
Publication Date: Jul. 2008
Revision: 1.1
Max.
8
8
M24L48512DA
5 for all speeds
22 for 55 ns speed
22 for 60 ns speed
15 for 70 ns speed
V
CC
A
Max.
)
250
3.6
0.4
0.4
+1
+1
40
+ 0.4
Unit
pF
pF
V
2.7V to 3.6V
2.7V to 3.6V
CC
3/12
Unit
mA
µA
µA
µA
µA
V
V
V
V
V