m52s128168a Elite Semiconductor Memory Technology Inc., m52s128168a Datasheet - Page 6

• Manufacturer Part Number: m52s128168a
• Description: 2m X 16 Bit X 4 Banks Synchronous Dram
• Manufacturer: Elite Semiconductor Memory Technology Inc.

AC CHARACTERISTICS (AC operating conditions unless otherwise noted)
Note: 1.Parameters depend on programmed CAS latency.
If tr & tf is longer than 1ns, transient time compensation should be considered, i.e., [(tr+ tf)/2-1]ns should be added to the
parameter.
Elite Semiconductor Memory Technology Inc.
CLK cycle time
CLK to valid
output delay
Output data hold time
CLK high pulse width
CLK low pulse width
Input setup time
Input hold time
CLK to output in Low-Z
CLK to output in
Hi-Z
2.If clock rising time is longer than 1ns,(tr/2-0.5)ns should be added to the parameter.
3.Assumed input rise and fall time (tr & tf)=1ns.
Parameter
CAS Latency =3
CAS Latency =2
CAS Latency =3
CAS Latency =2
CAS Latency =3
CAS Latency =2
Symbol
t
t
t
t
t
t
t
t
SAC
t
SHZ
SLZ
CC
OH
CH
SH
CL
SS
Min
2.5
2.5
2.5
7
9
2
1
1
-7
1000
Max
5.5
5.5
*All AC parameters are measured from half to half.
7
7
Min
7.5
2.5
2.5
2.5
9
2
1
1
-7.5
1000
Max
6
7
6
7
Publication Date: Dec. 2008
Revision: 1.2
Min
2.5
2.5
10
12
3
3
1
1
-10
M52S128168A
1000
Max
10
10
7
7
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
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Note
1
1
2
3
3
3
3
2