m52s16161a Elite Semiconductor Memory Technology Inc., m52s16161a Datasheet - Page 24

• Manufacturer Part Number: m52s16161a
• Description: 512k X 16bit X 2banks Mobile Synchronous Dram
• Manufacturer: Elite Semiconductor Memory Technology Inc.

ESMT
Active/Precharge Power Down Mode @ CAS Latency=2, Burst Length=4
A 1 0 / A P
*Note: 1. Both banks should be in idle state prior to entering precharge power down mode.
Elite Semiconductor Memory Technology Inc.
C L O C K
A D D R
D Q M
C A S
C K E
R A S
D Q
W E
C S
B A
2. CKE should be set high at least 1CLK+tss prior to Row active command.
3. Can not violate minimum refresh specification. (32ms)
0
P o w e r - D o w n
1
P r e c h a r g e
E n t r y
t
* N o t e 1
S S
2
* N o t e 3
3
4
5
Power-Down
Precharge
Exit
6
Row Active
R a
R a
* N o t e 2
7
Power-down
t
Active
Entry
S S
8
9
t
S S
10
Power-down
Active
Exit
11
Read
C a
12
13
Q a0
14
P r e c h a r g e
Revision : 1.6
Publication Date : May 2009
Q a 1
M52S16161A
15
t
S H Z
Q a 2
16
17
: D o n ' t c a r e
18
24/32
19