am45dl3208g Advanced Micro Devices, am45dl3208g Datasheet - Page 40

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am45dl3208g

Manufacturer Part Number
am45dl3208g
Description
Stacked Multi-chip Package Mcp Flash Memory And Sram
Manufacturer
Advanced Micro Devices
Datasheet
FLASH DC CHARACTERISTICS
CMOS Compatible
Notes:
1.
2. Maximum I
3. I
38
Parameter
Symbol
The I
V
progress.
CC
V
V
V
I
I
I
I
I
I
I
I
V
V
IH
CC1
CC2
CC3
CC4
CC5
CC6
CC7
CC8
V
V
I
I
I
V
I
I
LIT
LIA
OH1
OH2
LR
LO
LKO
LI
HH
OL
.
IH
ID
IL
active while Embedded Erase or Embedded Program is in
f
f
f
f
f
f
f
f
CC
current listed is typically less than 2 mA/MHz, with OE# at
CC
Input Load Current
Reset Leakage Current
RESET# Input Load Current
Output Leakage Current
ACC Input Leakage Current
Flash V
(Notes 1, 2)
Flash V
Flash V
Flash V
Flash V
(Notes 2, 4)
Flash V
Current (Notes 1, 2)
Flash V
Current (Notes 1, 2)
Flash V
Program-While-Erase-Suspended Current
(Notes 2, 5)
Input Low Voltage
Input High Voltage
Voltage for WP#/ACC Program
Acceleration and Sector
Protection/Unprotection
Voltage for Sector Protection, Autoselect
and Temporary Sector Unprotect
Output Low Voltage
Output High Voltage
Flash Low V
specifications are tested with V
CC
CC
CC
CC
CC
CC
CC
CC
Parameter Description
Active Write Current (Notes 2, 3) CE#f = V
Active Read Current
Standby Current (Note 2)
Reset Current (Note 2)
Current Automatic Sleep Mode
Active Read-While-Program
Active Read-While-Erase
Active
CC
Lock-Out Voltage (Note 5)
CC
= V
P R E L I M I N A R Y
CC
max.
V
V
V
V
V
V
V
= V
CE#f = V
Byte Mode
CE#f = V
Word Mode
V
WP#/ACC = V
V
WP#/ACC = V
V
V
CE#f = V
CE#f = V
CE#f = V
I
I
I
OL
OH
OH
OUT
IN
CC
CC
CC
CC
CC
CC
CC
CC
IL
Am45DL3208G
ACC max
= V
= 4.0 mA, V
= –2.0 mA, V
= –100 µA, V
= V
f = V
f = V
f = V
= V
= V
= V
= V
= V
= V
SS
SS
CC max
CC max
CC max
CC max
CC max
CC max
CC max
CC max
SS
IL
IL
IL
IL
IL
IL
± 0.3 V
to V
, OE# = V
, OE# = V
, OE# = V
, OE# = V
, OE# = V
, OE#f = V
Test Conditions
to V
; RESET# = 12.5 V
; RESET# = 12.5 V
, WP#/ACC
CC
, RESET# = V
, CE#f, RESET#,
, V
CC
CC
CC
CC
,
4. Automatic sleep mode enables the low power mode when
5.
f ± 0.3 V
f ± 0.3 V
CC
CC
IH
f = V
,
= V
f = V
= V
IH
IH
IH
IH
IH
addresses remain stable for t
current is 200 nA.
Not 100% tested.
IH
,
, WE# = V
,
CC
CC
CC min
CC
s = V
± 0.3 V;
s = V
SS
5 MHz
1 MHz
5 MHz
1 MHz
CC min
Word
Word
± 0.3 V,
Byte
Byte
CC min
IL
V
0.85 x
CC
–0.2
11.5
Min
V
2.4
8.5
2.3
CC
–0.4
ACC
+ 30 ns. Typical sleep mode
Typ
0.2
0.2
0.2
10
10
15
21
21
21
21
17
2
2
V
CC
March 12, 2004
Max
±1.0
±1.0
12.5
0.45
0.8
9.5
2.5
35
16
16
30
45
45
45
45
35
35
35
4
4
5
5
5
+ 0.2
Unit
mA
mA
mA
mA
mA
µA
µA
µA
µA
µA
µA
µA
µA
V
V
V
V
V
V
V

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