am45dl3208g Advanced Micro Devices, am45dl3208g Datasheet - Page 62

• Manufacturer Part Number: am45dl3208g
• Description: Stacked Multi-chip Package Mcp Flash Memory And Sram
• Manufacturer: Advanced Micro Devices

FLASH ERASE AND PROGRAMMING PERFORMANCE
Notes:
1. Typical program and erase times assume the following conditions: 25 ° C, 3.0 V V
2. Under worst case conditions of 90 ° C, V
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See Tables
6. The device has a minimum erase and program cycle endurance of 1,000,000 cycles.
LATCHUP CHARACTERISTICS
Note: Includes all pins except V
PACKAGE PIN CAPACITANCE
Notes:
1. Sampled, not 100% tested.
2. Test conditions T
FLASH DATA RETENTION
60
Parameter
Sector Erase Time
Chip Erase Time
Byte Program Time
Accelerated Byte/Word Program Time
Word Program Time
Chip Program Time
(Note 3)
Input voltage with respect to V
(including A9, OE#, and RESET#)
Input voltage with respect to V
V
Parameter Description
Minimum Pattern Data Retention Time
CC
programming typicals assume checkerboard pattern.
program faster than the maximum program times listed.
15
Parameter
Current
Symbol
and
C
C
C
C
OUT
IN2
IN3
IN
16
for further information on command definitions.
A
Parameter Description
Input Capacitance
Output Capacitance
Control Pin Capacitance
WP#/ACC Pin Capacitance
= 25°C, f = 1.0 MHz.
Description
SS
SS
CC
Word Mode
Byte Mode
on all pins except I/O pins
on all I/O pins
. Test conditions: V
CC
= 2.7 V, 1,000,000 cycles.
P R E L I M I N A R Y
Typ (Note 1)
CC
Am45DL3208G
= 3.0 V, one pin at a time.
0.4
28
21
14
5
4
7
Max (Note 2)
150
120
210
63
42
5
Test Setup
V
V
V
V
Test Conditions
OUT
IN
IN
IN
–100 mA
–1.0 V
–1.0 V
= 0
= 0
= 0
Min
= 0
CC
150°C
125°C
, 1,000,000 cycles. Additionally,
Unit
sec
sec
sec
µs
µs
µs
Excludes 00h programming
prior to erasure (Note 4)
Excludes system level
overhead (Note 5)
Typ
11
12
14
17
Comments
V
+100 mA
CC
March 12, 2004
12.5 V
Min
Max
10
20
Max
+ 1.0 V
14
16
16
20
Years
Years
Unit
Unit
pF
pF
pF
pF