h5tq4g43mmr Hynix Semiconductor, h5tq4g43mmr Datasheet - Page 11

• Manufacturer Part Number: h5tq4g43mmr
• Description: 4gb Ddr3 Sdram Ddp
• Manufacturer: Hynix Semiconductor

Rev. 0.1 /Aug 2008
2. Command Description
2.1 Command Truth Table
(a) note 1,2,3,4 apply to the entire Command Truth Table
(b) Note 5 applies to all Read/Write command
[BA = Bank Address, RA = Rank Address, CA = Column Address, BC = Burst Chop, X = Don’t Care, V = Valid]
Read (Fixed BL8 or BC4)
Write (Fixed BL8 or BC4)
Single Bank Precharge
Read (BC4, on the Fly)
Write (BC4, on the Fly)
Write (BL8, on the Fly)
Read (BL8, on the Fly)
Precharge all Banks
(Fixed BL8 or BC4)
(Fixed BL8 or BC4)
Device Deselected
Mode Register Set
Power Down Entry
Self Refresh Entry
(BC4, on the Fly)
(BC4, on the Fly)
Self Refresh Exit
(BL8, on the Fly)
(BL8, on the Fly)
Read with Auto
Read with Auto
Read with Auto
Write with Auto
Write with Auto
Write with Auto
Bank Activate
No Operation
Precharge
Precharge
Precharge
Precharge
Precharge
Precharge
Function
Refresh
Abbrev
RDAS4
RDAS8
WRAS
WRAS
WRS4
WRS8
iation
PREA
RDS4
RDS8
WRA
MRS
NOP
SRE
SRX
PRE
RDA
DES
PDE
REF
ACT
WR
RD
4
8
Cycle
Previ
ous
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
L
CKE
Curre
Cycle
nt
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
L
L
CS
H
H
H
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
RAS
V
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
V
L
L
L
L
L
L
X
CAS
V
H
H
H
H
H
X
H
V
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
WE BA0-
H
H
H
H
H
H
H
H
H
H
H
H
V
X
V
L
L
L
L
L
L
L
L
L
BA3
BA
BA
BA
BA
BA
BA
BA
BA
BA
BA
BA
BA
BA
BA
BA
V
V
V
V
V
X
V
A13-
RFU
RFU
RFU
RFU
RFU
RFU
RFU
RFU
RFU
RFU
RFU
RFU
A15
V
V
V
V
V
V
X
V
Row Address (RA)
H5TQ4G43MMR-xxC
H5TQ4G83MMR-xxC
A12-
BC
OP Code
V
V
V
V
V
V
H
V
H
V
H
V
H
V
X
V
L
L
L
L
A10-
AP
H
H
H
H
H
H
H
V
V
V
V
X
V
L
L
L
L
L
L
L
A11
A0-
A9,
CA
CA
CA
CA
CA
CA
CA
CA
CA
CA
CA
CA
V
V
V
V
V
V
X
V
11
7,8,9,1
Notes
7,9,12
6,12
10
11
2