hy5ps1g821m Hynix Semiconductor, hy5ps1g821m Datasheet - Page 44

• Manufacturer Part Number: hy5ps1g821m
• Description: 1gb Ddr2 Sdram
• Manufacturer: Hynix Semiconductor

Rev. 0.2 / Oct. 2005
Example 1: Burst Read Operation with Auto Precharge:
RL = 4, AL = 1, CL = 3, BL = 8, t
Example 2: Burst Read Operation with Auto Precharge:
RL = 4, AL = 1, CL = 3, BL = 4, t
CK/CK
CMD
DQS/DQS
DQ’s
CK/CK
CMD
DQS/DQS
DQ’s
Autoprecharge
Autoprecharge
Post CAS
Post CAS
READ A
first 4-bit prefetch
READ A
T0
T0
4-bit prefetch
AL = 1
AL = 1
T1
T1
NOP
NOP
AL + BL/2 clks
> = AL + tRTP + tRP
second 4-bit prefetch
t
T2
RL =4
T2
RL =4
RTP
NOP
NOP
CL = 3
CL = 3
RTP
RTP
T3
T3
NOP
NOP
Precharge begins here
<= 2 clocks
> 2 clocks
t
RTP
T4
T4
NOP
> = t
NOP
DOUT A
DOUT A
RTP
0
0
DOUT A
DOUT A
1
1
NOP
NOP
T5
T5
Precharge begins here
DOUT A
DOUT A
2
2
DOUT A
DOUT A
t
RP
3
3
T6
T6
NOP
NOP
DOUT A
> = t
4
1HY5PS12421(L)M
RP
DOUT A
HY5PS12821(L)M
5
Activate
T7
T7
NOP
Bank A
DOUT A
6
DOUT A
Activate
Bank A
NOP
7
T 8
T 8
44