hy5ps1g821m Hynix Semiconductor, hy5ps1g821m Datasheet - Page 50

• Manufacturer Part Number: hy5ps1g821m
• Description: 1gb Ddr2 Sdram
• Manufacturer: Hynix Semiconductor

Read to power down entry
Rev. 0.2 / Oct. 2005
Read with Autoprecharge to power down entry
CMD
CMD
CMD
CMD
DQS
DQS
DQS
CKE
CKE
CKE
DQS
DQS
DQS
CKE
DQS
DQS
DQ
DQ
DQ
DQ
CK
CK
CK
CK
T0
T0
T0
T0
T1
T1
RDA
T1
RDA
RD
T1
RD
BL=4
BL=8
BL=8
BL=4
T2
T2
T2
T2
AL + BL/2
with tRTP = 7.5ns
& tRAS min satisfied
PRE
Tx
Tx
Tx
Tx
& tRAS min satisfied
AL + BL/2
with tRTP = 7.5ns
AL + CL
AL + CL
AL + CL
AL + CL
Tx+1
Tx+1
Tx+1
Tx+1
Q
Q
Q
Q
Q
Q
Q
Q
PRE
Tx+2
Tx+2
Tx+2
Tx+2
Q
Q
Q
Q
Q
Q
Q
Q
Tx+3
Tx+3
Tx+3
Tx+3
Start internal precharge
Q
Q
CKE should be kept high until the end of burst operation.
Read operation starts with a read command and
CKE should be kept high until the end of burst operation.
Q
Q
Tx+4
Tx+4
Tx+4
Tx+4
Q
Q
Q
Q
Tx+5
Tx+5
Tx+5
Tx+5
CKE should be kept high
until the end of burst operation.
Tx+6
Tx+6
Tx+6
Tx+6
1HY5PS12421(L)M
HY5PS12821(L)M
CKE should be kept high
until the end of burst operation.
Tx+7
Tx+7
Tx+7
Tx+7
Tx+8
Tx+8
Tx+8
Tx+8
Tx+9
Tx+9
Tx+9
Tx+9
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