hy5ps1g821m Hynix Semiconductor, hy5ps1g821m Datasheet - Page 70

• Manufacturer Part Number: hy5ps1g821m
• Description: 1gb Ddr2 Sdram
• Manufacturer: Hynix Semiconductor

Rev. 0.2 / Oct. 2005
6.2 IDD Meauarement Conditions
Note:
1. IDD specifications are tested after the device is properly initialized
2. Input slew rate is specified by AC Parametric Test Condition
3. IDD parameters are specified with ODT disabled.
4. Data bus consists of DQ, DM, DQS, DQS, RDQS, RDQS, LDQS, LDQS, UDQS, and UDQS. IDD values must be met with all combina-
5. Definitions for IDD
IDD0
IDD1
IDD2P
IDD2Q
IDD2N
IDD3P
IDD3N
IDD4W
IDD4R
IDD5B
IDD6
IDD7
Symbol
tions of EMRS bits 10 and 11.
LOW is defined as Vin ≤ VILAC(max)
HIGH is defined as Vin ≥ VIHAC(min)
STABLE is defined as inputs stable at a HIGH or LOW level
FLOATING is defined as inputs at VREF = VDDQ/2
SWITCHING is defined as:
inputs changing between HIGH and LOW every other clock cycle (once per two clocks) for address and control signals, and
inputs changing between HIGH and LOW every other data transfer (once per clock) for DQ signals not including masks or strobes.
Operating one bank active-precharge current; t CK = t CK(IDD), t RC = t RC(IDD), t RAS = t RAS-
min(IDD);CKE is HIGH, CS is HIGH between valid commands;Address bus inputs are SWITCHING;Data bus
inputs are SWITCHING
Operating one bank active-read-precharge curren ; IOUT = 0mA;BL = 4, CL = CL(IDD), AL = 0;
t CK = t CK(IDD), t RC = t RC (IDD), t RAS = t RASmin(IDD), t RCD = t RCD(IDD) ; CKE is HIGH, CS is HIGH
between valid commands ; Address bus inputs are SWITCHING ; Data pattern is same as IDD4W
Precharge power-down current ; All banks idle ; t CK = t CK(IDD) ; CKE is LOW ; Other control and address
bus inputs are STABLE; Data bus inputs are FLOATING
Precharge quiet standby current;All banks idle; t CK = t CK(IDD);CKE is HIGH, CS is HIGH; Other control
and address bus inputs are STABLE; Data bus inputs are FLOATING
Precharge standby current; All banks idle; t CK = t CK(IDD); CKE is HIGH, CS is HIGH; Other control and
address bus inputs are SWITCHING; Data bus inputs are SWITCHING
Active power-down current; All banks open; t CK = t CK(IDD); CKE is
LOW; Other control and address bus inputs are STABLE; Data bus inputs
are FLOATING
Active standby current; All banks open; t CK = t CK(IDD), t RAS = t RASmax(IDD), t RP = t RP(IDD); CKE is
HIGH, CS is HIGH between valid commands; Other control and address bus inputs are SWITCHING; Data
bus inputs are SWITCHING
Operating burst write current; All banks open, Continuous burst writes; BL = 4, CL = CL(IDD), AL = 0; t CK =
t CK(IDD), t RAS = t RASmax(IDD), t RP = t RP(IDD); CKE is HIGH, CS is HIGH between valid commands;
Address bus inputs are SWITCHING; Data bus inputs are SWITCHING
Operating burst read current; All banks open, Continuous burst reads, IOUT = 0mA; BL = 4, CL = CL(IDD),
AL = 0; t CK = t CK(IDD), t RAS = t RASmax(IDD), t RP = t RP(IDD); CKE is HIGH, CS is HIGH between valid
commands; Address bus inputs are SWITCHING;; Data pattern is same as IDD4W
Burst refresh current; t CK = t CK(IDD); Refresh command at every t RFC(IDD) interval; CKE is HIGH, CS is
HIGH between valid commands; Other control and address bus inputs are SWITCHING; Data bus inputs are
SWITCHING
Self refresh current; CK and CK at 0V; CKE ≤ 0.2V; Other control and address bus inputs are FLOATING;
Data bus inputs are FLOATING
Operating bank interleave read current; All bank interleaving reads, IOUT = 0mA; BL = 4, CL = CL(IDD), AL
= t RCD(IDD)-1* t CK(IDD); t CK = t CK(IDD), t RC = t RC(IDD), t RRD = t RRD(IDD), t RCD = 1* t CK(IDD); CKE is
HIGH, CS is HIGH between valid commands; Address bus inputs are STABLE during DESELECTs; Data pat-
tern is same as IDD4R; - Refer to the following page for detailed timing conditions
Conditions
Fast PDN Exit MRS(12) = 0
Slow PDN Exit MRS(12) = 1
1HY5PS12421(L)M
HY5PS12821(L)M
Units
70
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA