en29lv800bt-90tip Eon Silicon Solution Inc., en29lv800bt-90tip Datasheet - Page 23

• Manufacturer Part Number: en29lv800bt-90tip
• Description: 8 Megabit 1024k X 8-bit / 512k X 16-bit Flash Memory Boot Sector Flash Memory, Cmos 3.0 Volt-only
• Manufacturer: Eon Silicon Solution Inc.

Table 7. DC Characteristics
(T
Notes
1. BYTE# pin can also be GND
they draw power if not at full CMOS supply voltages.
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
Symbol
V
a
I
I
I
I
V
V
CC1
CC2
CC3
CC4
V
V
I
V
I
LKO
= 0°C to 70°C or - 40°C to 85°C; V
I
LO
OH
ID
OL
LI
IH
ID
IL
Supply Current (Program or Erase)
A9 Voltage (Electronic Signature)
A9 Current (Electronic Signature)
Supply Current (Standby - CMOS)
Supply Current (Standby - TTL)
Output High Voltage CMOS
Supply Current (read) TTL
Supply voltage (Erase and
Output High Voltage TTL
Output Leakage Current
Automatic Sleep Mode
Input Leakage Current
Output Low Voltage
Input High Voltage
Input Low Voltage
Program lock-out)
Parameter
(read) CMOS Word
(read) CMOS Byte
CC
± 0.3V. BYTE# and RESET# pin input buffers are always enabled so that
= 2.7-3.6V)
Rev. H, Issue Date: 2008/07/07
Byte program, Sector or
RESET# = Vcc ± 0.3V
Chip Erase in progress
CE# = V
BYTE# = RESET# =
V
V
Test Conditions
0V≤ V
CE# = BYTE# =
I
23
IH
0V≤ V
IL
I
OH
I
OH
OL
CE# = V
Vcc ± 0.3V
= Vss ± 0.3 V
f = 5MHz
= Vcc ± 0.3 V
A9 = V
(Note 1)
(Note 1)
= -100 μA,
IL
= -2.0 mA
= 4.0 mA
OUT
©2004 Eon Silicon Solution, Inc., www.essi.com.tw
; OE# = V
IN
≤ Vcc
≤ Vcc
ID
IH
,
IH
;
0.85 x
Vcc -
0.7 x
0.4V
10.5
Min
-0.5
Vcc
Vcc
2.3
EN29LV800B
Typ
0.4
15
8
6
7
1
1
Vcc ±
Max
0.45
11.5
100
1.0
5.0
5.0
0.8
0.3
2.5
±5
±5
18
20
30
16
Unit
mA
mA
mA
mA
mA
µA
µA
µA
µA
µA
V
V
V
V
V
V
V