en29lv800bt-90tip Eon Silicon Solution Inc., en29lv800bt-90tip Datasheet - Page 30

• Manufacturer Part Number: en29lv800bt-90tip
• Description: 8 Megabit 1024k X 8-bit / 512k X 16-bit Flash Memory Boot Sector Flash Memory, Cmos 3.0 Volt-only
• Manufacturer: Eon Silicon Solution Inc.

Parameter Description
Chip Programming
Table 11. ERASE AND PROGRAMMING PERFORMANCE
Table 12. LATCH UP CHARACTERISTICS
Note : These are latch up characteristics and the device should never be put under
these conditions. Refer to Absolute Maximum ratings for the actual operating limits.
Table 14. 48-PIN TSOP PIN CAPACITANCE @ 25°C, 1.0MHz
( V
Table 15. DATA RETENTION
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
Erase/Program Endurance
Parameter Symbol
Word Programming Time
Byte Programming Time
Input voltage with respect to V
CC
Sector Erase Time
= 2.7-3.6V)
Chip Erase Time
Minimum Pattern Data Retention Time
Time
C
Input voltage with respect to V
C
Parameter
C
OUT
IN2
IN
Parameter Description
(including A9, Reset and OE#)
Word
Byte
Vcc Current
Control Pin Capacitance
Parameter Description
Output Capacitance
Input Capacitance
ss
on all pins except I/O pins
100K
Typ
0.5
8.4
4.2
8
8
8
ss
on all I/O Pins
Rev. H, Issue Date: 2008/07/07
Limits
Max
25.2
12.6
300
300
10
30
Test Conditions
Test Setup
V
V
V
©2004 Eon Silicon Solution, Inc., www.essi.com.tw
OUT
150°C
125°C
IN
IN
cycles
= 0
= 0
Unit
sec
sec
sec
= 0
µs
µs
-100 mA
-1.0 V
-1.0 V
Min
Excludes 00H programming prior
Excludes system level overhead
Typ
8.5
7.5
6
Minimum 100K cycles
Min
10
20
EN29LV800B
Comments
to erasure
Max
7.5
12
9
Vcc + 1.0 V
100 mA
12.0 V
Max
Years
Years
Unit
Unit
pF
pF
pF