DAC1408D650C1 NXP [NXP Semiconductors], DAC1408D650C1 Datasheet - Page 8
![no-image](/images/no-image-200.jpg)
DAC1408D650C1
Manufacturer Part Number
DAC1408D650C1
Description
Dual 14-bit DAC up to 650 Msps 2, 4 or 8 interpolating
Manufacturer
NXP [NXP Semiconductors]
Datasheet
1.DAC1408D650C1.pdf
(98 pages)
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NXP Semiconductors
Table 5.
V
typical values measured at V
sample rate; PLL off unless otherwise specified.
DAC1408D650
Preliminary data sheet
Symbol
V
I
I
Digital outputs (SDO, SDIO)
V
V
Digital inputs (Vin_p/Vin_n)
V
V
Z
ΔZ
Digital outputs (SYNC_OUTN/SYNC_OUTP)
V
V
Digital inputs/outputs (MDS_N/MDS_P)
V
C
C
Analog outputs (IOUTAP, IOUTAN, IOUTBP, IOUTBN)
I
V
R
C
ΔE
ΔE
IL
IH
O(fs)
DDA(1V8)
tt
IH
OL
OH
I(cm)
I(dif)(p-p)
o(cm)
o(dif)(p-p)
o(dif)(p-p)
O
o(L)
i
o
o
i
O
G
= V
Characteristics
DDD
Parameter
HIGH-level input
voltage
LOW-level input
current
HIGH-level input
current
LOW-level output
voltage
HIGH-level output
voltage
common-mode input
voltage
peak-to-peak
differential input
voltage
V
differential input
impedance
common-mode output
voltage
peak-to-peak
differential output
voltage
peak-to-peak
differential output
voltage
output load
capacitance
input capacitance
full-scale output
current
output voltage
output resistance
output capacitance
offset error variation
gain error variation
= 1.7 V to 1.9 V; V
tt
source impedance
…continued
DDA(1V8)
[4]
DDA(3V3)
= V
DDD
Conditions
V
V
between pins GND and
MDS_N or MDS_P
between pins GND and
MDS_N or MDS_P
register value = 00h
register = default value
compliance range
DAC1408D; up to 650 Msps; 2×, 4× or 8× interpolating with JESD204A
All information provided in this document is subject to legal disclaimers.
IL
IH
= 3.0 V to 3.6 V; AGND and GND are shorted together; T
= 0.54 V
= 1.8 V; V
= 1.26 V
[5]
Rev. 02 — 11 August 2010
DDA(3V3)
= 3.3 V; T
Test
C
I
I
C
C
D
D
D
D
C
C
D
D
D
D
D
D
D
C
C
amb
[1]
= +25
°
C; R
Min
1.26
-
-
<tbd>
<tbd>
0.68
175
-
-
0.79
0.12
-
-
-
-
-
1.8
-
-
-
-
L
DAC1408D650
= 50
Typ
-
1
1
-
-
0.78
-
0.7
100
0.98
0.48
600
-
0.3
1.6
20
-
250
3
6
18
Ω
; I
O(fs)
amb
= 20 mA; maximum
V
-
-
-
-
Max
V
-
-
<tbd>
<tbd>
1.40
1000
-
-
1.46
0.96
-
10
-
-
-
© NXP B.V. 2010. All rights reserved.
=
DDD
DDA(3V3)
−
40
°
C to +85
Unit
V
μA
μA
V
V
V
mV
Ω
Ω
V
V
mV
pF
pF
mA
mA
V
kΩ
pF
ppm/°C
ppm/°C
8 of 98
°
C;
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