HY27US08561M HYNIX [Hynix Semiconductor], HY27US08561M Datasheet - Page 16

• Manufacturer Part Number: HY27US08561M
• Description: 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash
• Manufacturer: HYNIX [Hynix Semiconductor]

Block
Block
I/O
RB
Rev 0.7 / Oct. 2004
Note : GND input=L, 00h Command
Note : GND input=L, 01h Command
(1st half Page)
(1st half Page)
Read A Command, x8 Devices
Area A
Area A
Command
01h/50h
Read B Command, x8 Devices
00h/
Code
(2nd half
(2nd half
Area B
Area B
Page)
Page)
(Read Busy time)
Address Inputs
Figure 13. Sequential Row Read Block Diagrams
tBLBH1
(Spare)
(Spare)
Area C
Area C
Figure 12. Sequential Row Read Operation
Busy
1st Page
2nd Page
Nth Page
1st Page
2nd Page
Nth Page
256Mbit (32Mx8bit / 16Mx16bit) NAND Flash
Page Output
1st
tBLBH1
Block
Block
Busy
Note : GND input=L, 00h Command
Note : GND input=L, 50h Command
Read A Command, x16 Devices
HY27US(08/16)561M Series
HY27SS(08/16)561M Series
Area A
Read C Command, x8/x16 Devices
Page Output
(main area)
2nd
Area A
tBLBH1
Area A/B
Busy
Page Output
Area C
(Spare)
(50h)
Area C
Nth
1st Page
2nd Page
Nth Page
1st Page
2nd Page
Nth Page
16