HY27US08561M HYNIX [Hynix Semiconductor], HY27US08561M Datasheet - Page 27

• Manufacturer Part Number: HY27US08561M
• Description: 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash
• Manufacturer: HYNIX [Hynix Semiconductor]

Rev 0.7 / Oct. 2004
Table 13: DC Characteristics, 3.3V Device and 1.8V Device
Symbol
I
OL
V
I
I
I
I
I
V
V
V
I
V
CC1
CC2
CC3
CC4
CC5
I
LKO
(RB)
LO
OH
LI
OL
IH
IL
(CMOS)
el
Output Low Current (RB)
Output Low Voltage Lev-
Operating
Current
Stand-by Current (TTL)
Stand-By Current
Input Leakage Current
Output Leakage Current
Input High Voltage
Input Low Voltage
Output High Voltage
Level
V
(Erase and Program
lockout)
DD
Supply Voltage
Parameter
Sequentia
Read
Program
Erase
CE=V
GND(Pin #6)=0V/Vcc
CE=V
GND(Pin #6)=0V/Vcc
(for 3.3V Device)
(for 1.8V Device)
(for 1.8V Device)
(for 3.3V Device)
(for 1.8V Device)
t
CE=V
V
V
I
I
I
(for 3.3V Device)
I
V
V
RLRL
OH
OH
OL
OL
Test Condition
IN
OUT
OL
OL
= 0 to V
= 2.1mA
= 100uA
= -400uA
= -100uA
IH
CC
= 0.4V
= 0.1V
= 0 to V
minimum
IL
, WP=0V/V
-0.2, WP=0/V
, I
OUT
256Mbit (32Mx8bit / 16Mx16bit) NAND Flash
-
-
-
-
-
CC
CC
= 0 mA
max
max
CC,
CC
Min
-0.3
2.0
2.4
8
-
-
-
-
-
-
-
-
-
3.3V Device
Typ
10
10
10
10
10
-
-
-
-
-
-
-
-
HY27US(08/16)561M Series
HY27SS(08/16)561M Series
V
CC
Max
±
±
0.8
0.4
2.5
20
20
20
50
1
+0.3
-
-
10
10
V
V
Min
CC
CC
-0.3
3
-
-
-
-
-
-
-
-
-
-0.4
-0.1
1.8V Device
Typ
10
8
8
8
4
-
-
-
-
-
-
V
CC
Max
±
±
0.4
0.1
1.5
15
15
15
50
1
+0.3
-
-
10
10
27
Unit
mA
mA
mA
mA
mA
uA
uA
uA
V
V
V
V
V