HY27US08561M HYNIX [Hynix Semiconductor], HY27US08561M Datasheet - Page 36

no-image

HY27US08561M

Manufacturer Part Number
HY27US08561M
Description
256Mbit (32Mx8bit / 16Mx16bit) NAND Flash
Manufacturer
HYNIX [Hynix Semiconductor]
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
HY27US08561M
Manufacturer:
HY
Quantity:
1 000
Part Number:
HY27US08561M
Manufacturer:
HY
Quantity:
1 000
Part Number:
HY27US08561M
Manufacturer:
HY
Quantity:
1 000
Part Number:
HY27US08561M-TPCB
Manufacturer:
SAMSUNG
Quantity:
3 520
Part Number:
HY27US08561M-TPCP
Manufacturer:
HY
Quantity:
5 530
WE
Rev 0.7 / Oct. 2004
RE
RB
CLE
CE
ALE
I/O
ALE
CLE
I/O
WE
RE
RB
Setup Command Block Address Input
Block Erase
60h
tWLWL
(Write Cycle time)
FFh
cycle 1
Add. N
cycle 2
Add. N
Figure 30. Block Erase AC Waveform
Figure 31. Reset AC Waveform
(Reset Busy time)
Confirm
256Mbit (32Mx8bit / 16Mx16bit) NAND Flash
Code
tBLBH4
D0h
(Erase Busy time)
Block Erase
tBLBH3
HY27US(08/16)561M Series
HY27SS(08/16)561M Series
Read Status Register
70h
SR0
36

Related parts for HY27US08561M