AM29LV2562M AMD [Advanced Micro Devices], AM29LV2562M Datasheet - Page 3

• Manufacturer Part Number: AM29LV2562M
• Manufacturer: AMD [Advanced Micro Devices]

Am29LV2562M
512 Megabit (16 M x 32-Bit/32 M x 16-Bit)
MirrorBit™ 3.0 Volt-only Uniform Sector
Flash Memory with VersatileI/O™ Control
DISTINCTIVE CHARACTERISTICS
ARCHITECTURAL ADVANTAGES
PERFORMANCE CHARACTERISTICS
This Data Sheet states AMD’s current technical specifications regarding the Products described herein. This Data
Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.
This product has been retired and is not available for designs. For new and current designs, S29GL512N supersedes Am29LV2562M and is the
factory-recommended migration path. Please refer to the S29GL512N Data Sheet for specifications and ordering information. Availability of this
document is retained for reference and historical purposes only.
Single power supply operation
— 3 volt read, erase, and program operations
VersatileI/O
— Device generates data output voltages and tolerates
Manufactured on 0.23 µm MirrorBit
technology
SecSi™ (Secured Silicon) Sector region
— 128-doubleword/256-word sector for permanent,
— May be programmed and locked at the factory or by
Flexible sector architecture
— Five hundred twelve 32 Kdoubleword (64 Kword)
Compatibility with JEDEC standards
— Provides pinout and software compatibility for
100,000 erase cycles per sector
20-year data retention at 125°C
High performance
— 120 ns access time
— 30 ns page read times
— 0.5 s typical sector erase time
— 15 µs typical write buffer doubleword programming
data input voltages on the CE# and DQ inputs/outputs
as determined by the voltage on the V
from 1.65 to 3.6 V
secure identification through an
8-doubleword/16-word random Electronic Serial
Number, accessible through a command sequence
the customer
sectors
single-power supply flash, and superior inadvertent
write protection
time: 16-doubleword/32-word write buffer reduces
overall programming time for multiple-word updates
TM
control
Refer to AMD’s Website (www.amd.com) for the latest information.
TM
process
IO
pin; operates
SOFTWARE & HARDWARE FEATURES
— 4-doubleword/8-word page read buffer
— 16-doubleword/32-word write buffer
Low power consumption (typical values at 3.0 V, 5
MHz)
— 26 mA typical active read current
— 100 mA typical erase/program current
— 2 µA typical standby mode current
Package options
— 80-ball Fortified BGA
Software features
— Program Suspend & Resume: read other sectors
— Erase Suspend & Resume: read/program other
— Data# polling & toggle bits provide status
— Unlock Bypass Program command reduces overall
— CFI (Common Flash Interface) compliant: allows host
Hardware features
— Sector Group Protection: hardware-level method of
— Temporary Sector Group Unprotect: V
— WP#/ACC input accelerates programming time
— Hardware reset input (RESET#) resets device
— Ready/Busy# output (RY/BY#) detects program or
before programming operation is completed
sectors before an erase operation is completed
multiple-word or byte programming time
system to identify and accommodate multiple flash
devices
preventing write operations within a sector group
of changing code in locked sector groups
(when high voltage is applied) for greater throughput
during system production. Protects first or last sector
regardless of sector protection settings
erase cycle completion
Publication# 26494
Issue Date: December 16, 2005
Rev: B Amendment/+2
ID
-level method