AM29LV2562M AMD [Advanced Micro Devices], AM29LV2562M Datasheet - Page 4

• Manufacturer Part Number: AM29LV2562M
• Manufacturer: AMD [Advanced Micro Devices]

GENERAL DESCRIPTION
The Am29LV2562M consists of two 256 Mbit, 3.0 volt
single power supply flash memory devices and is or-
ganized as 16,777,216 doublewords or 33,554,432
words. The device has a 32-bit wide data bus that can
also function as an 16-bit wide data bus by using the
WORD# input. The device can be programmed either
in the host system or in standard EPROM program-
mers.
An access time of 120 ns is available. Note that each
access time has a specific operating voltage range
(V
the
fered in an 80-ball Fortified BGA package. Each de-
vice has separate chip enable (CE#), write enable
(WE#) and output enable (OE#) controls.
Each device requires only a single 3.0 volt power
supply for both read and write functions. In addition to
a V
(WP#/ACC) input provides shorter programming times
through increased current. This feature is intended to
facilitate factory throughput during system production,
but may also be used in the field if desired.
The device is entirely command set compatible with
the JEDEC single-power-supply Flash standard.
Commands are written to the device using standard
microprocessor write timing. Write cycles also inter-
nally latch addresses and data needed for the pro-
gramming and erase operations.
The sector erase architecture allows memory sec-
tors to be erased and reprogrammed without affecting
the data contents of other sectors. The device is fully
erased when shipped from the factory.
Device programming and erasure are initiated through
command sequences. Once a program or erase oper-
ation has begun, the host system need only poll the
DQ7 and DQ15 (Data# Polling) or DQ6 and DQ14
(toggle) status bits or monitor the Ready/Busy#
(RY/BY#) outputs to determine whether the operation
is complete. To facilitate programming, an Unlock By-
pass mode reduces command sequence overhead by
requiring only two write cycles to program data instead
of four.
The VersatileI/O™ (V
tem to set the voltage levels that the device generates
RELATED DOCUMENTS
For a comprehensive information on MirrorBit prod-
ucts, including migration information, data sheets, ap-
plication notes, and software drivers, please see
www.amd.com
tion
mentation.
closely related to this product:
2
CC
CC
→
Ordering Information
) as specified in the
MirrorBit
input, a high-voltage accelerated program
The following is a partial list of documents
→
→
Flash Information
Flash Memory
IO
) control allows the host sys-
Product Selector Guide
sections. The device is of-
→
→
Product Informa-
Technical Docu-
D A T A S H E E T
Am29LV2562M
and
and tolerates on the CE# control input and DQ I/Os to
the same voltage level that is asserted on the V
Refer to the Ordering Information section for valid V
options.
Hardware data protection measures include a low
V
tions during power transitions. The hardware sector
group protection feature disables both program and
erase operations in any combination of sector groups
of memory. This can be achieved in-system or via pro-
gramming equipment.
The Erase Suspend/Erase Resume feature allows
the host system to pause an erase operation in a given
sector to read or program any other sector and then
complete the erase operation. The Program Sus-
pend/Program Resume feature enables the host sys-
tem to pause a program operation in a given sector to
read any other sector and then complete the program
operation.
The hardware RESET# pin terminates any operation
in progress and resets the device, after which it is then
ready for a new operation. The RESET# pin may be
tied to the system reset circuitry. A system reset would
thus also reset the device, enabling the host system to
read boot-up firmware from the Flash memory device.
The device reduces power consumption in the
standby mode when it detects specific voltage levels
on CE# and RESET#, or when addresses have been
stable for a specified period of time.
The SecSi™ (Secured Silicon) Sector provides a
128-doubleword/256-word area for code or data that
can be permanently protected. Once this sector is pro-
tected, no further changes within the sector can occur.
The Write Protect (WP#/ACC) feature protects the
first or last sector by asserting a logic low on the WP#
pin.
AMD MirrorBit
Flash memory manufacturing experience to produce
the highest levels of quality, reliability and cost effec-
tiveness. The device electrically erases all bits within a
sector simultaneously via hot-hole assisted erase. The
data is programmed using hot electron injection.
MirrorBit™ Flash Memory Write Buffer Programming
and Page Buffer Read
Implementing a Common Layout for AMD MirrorBit
and Intel StrataFlash Memory Devices
Migrating from Single-byte to Three-byte Device IDs
CC
detector that automatically inhibits write opera-
TM
flash technology combines years of
December 16, 2005
IO
pin.
IO