HY57V281620ELT Hynix Semiconductor, HY57V281620ELT Datasheet - Page 11

• Manufacturer Part Number: HY57V281620ELT
• Description: 128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O
• Manufacturer: Hynix Semiconductor

AC CHARACTERISTICS II
Note: 1. A new command can be given t
Rev. 1.1 / Jan. 2005
RAS Cycle Time
RAS Cycle Time
RAS to CAS Delay
RAS Active Time
RAS Precharge Time
RAS to RAS Bank Active Delay
CAS to CAS Delay
Write Command to
Data-In Delay
Data-in to Precharge Command
Data-In to Active Command
DQM to Data-Out Hi-Z
DQM to Data-In Mask
MRS to New Command
Precharge to Data
Output High-Z
Power Down Exit Time
Self Refresh Exit Time
Refresh Time
Parameter
Operation
Auto Refresh
CAS
Latency=3
CAS
Latency=2
RRC
(AC operating conditions unless otherwise noted)
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
after self refresh exit.
RC
RRC
RCD
RAS
RP
RRD
CCD
WTL
DPL
DAL
DQZ
DQM
MRD
PROZ3
PROZ2
DPE
SRE
REF
Symbol
Synchronous DRAM Memory 128Mbit (8Mx16bit)
38.7 100K
Min Max Min Max Min Max Min Max
55
55
15
15
10
1
0
2
2
0
2
3
2
1
1
-
5
64
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
60
60
18
42
18
12
1
0
2
2
0
2
3
2
1
1
-
6
100K
64
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
t
DPL
HY57V281620E(L)T(P) Series
63
63
20
42
20
14
+ t
1
0
2
2
0
2
3
2
1
1
-
RP
7
100K
64
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
63
63
20
42
20
15
1
0
2
2
0
2
3
2
1
1
-
H
120K
64
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Unit Note
CLK
CLK
CLK
CLK
CLK
CLK
CLK
CLK
CLK
CLK
ms
ns
ns
ns
ns
ns
ns
1
11