HY57V281620ELT Hynix Semiconductor, HY57V281620ELT Datasheet - Page 5

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HY57V281620ELT

Manufacturer Part Number
HY57V281620ELT
Description
128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O
Manufacturer
Hynix Semiconductor
Datasheet
FUNCTIONAL BLOCK DIAGRAM
2Mbit x 4banks x 16 I/O Synchronous DRAM
Rev. 1.1 / Jan. 2005
U/LDQM
CKE
CLK
RAS
CAS
BA0
WE
A11
BA1
CS
A0
A1
Bank Select
Refresh
Row Active
logic & timer
Self refresh
Column
Active
Register
Address
Mode Register
Decoder
Internal Row
Column Add
Row
Decoder
Counter
Pre
Column
Counter
Pre
Synchronous DRAM Memory 128Mbit (8Mx16bit)
CAS Latency
Counter
Burst
2Mx16 BANK 3
2Mx16 BANK 2
2Mx16 BANK 1
Data Out Control
2Mx16 BANK 0
Y-Decoder
HY57V281620E(L)T(P) Series
Memory
Array
Cell
Pipe Line
Control
DQ15
DQ0
5

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