HY57V281620ELT Hynix Semiconductor, HY57V281620ELT Datasheet - Page 8

• Manufacturer Part Number: HY57V281620ELT
• Description: 128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O
• Manufacturer: Hynix Semiconductor

CAPACITANCE
DC CHARACTERISTICS I
Note:
Rev. 1.1 / Jan. 2005
1. V
2. D
Input capacitance
Data input / output capacitance
Input Leakage Current
Output Leakage Current
Output High Voltage
Output Low Voltage
IN
OUT
= 0 to 3.3V, All other balls are not tested under V
is disabled, V
Parameter
Parameter
OUT
(T
=0 to 3.6
A
= 0 to 70
Symbol
CLK
A0 ~ A11, BA0, BA1, CKE, CS, RAS, CAS,
WE, LDQM, UDQM
DQ0 ~ DQ15
(T
o
V
V
I
I
C, f=1MHz, V
LO
OH
LI
OL
A
= 0 to 70
IN
o
Synchronous DRAM Memory 128Mbit (8Mx16bit)
C)
=0V
DD
Pin
=3.3V)
Min
2.4
-1
-1
-
HY57V281620E(L)T(P) Series
Max
0.4
1
1
-
Symbol
CI/O
CI1
CI2
Min
2.0
2.5
3.0
Unit
uA
uA
V
V
Max
5.0
5.5
4.0
IOH = -2mA
IOL = +2mA
Note
1
2
Unit
pF
pF
pF
8