HY57V281620ELT Hynix Semiconductor, HY57V281620ELT Datasheet - Page 9

• Manufacturer Part Number: HY57V281620ELT
• Description: 128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O
• Manufacturer: Hynix Semiconductor

DC CHARACTERISTICS II
Note: 1. I
Rev. 1.1 / Jan. 2005
Operating Current
Precharge Standby Current
in Power Down Mode
Precharge Standby Current
in Non Power Down Mode
Active Standby Current
in Power Down Mode
Active Standby Current
in Non Power Down Mode
Burst Mode Operating Cur-
rent
Auto Refresh Current
Self Refresh Current
2. Min. of tRRC (Refresh RAS cycle time) is shown at AC CHARACTERISTICS II
3. HY57V281620ET(P) Series: Normal Power
Parameter
HY57V281620ELT(P) Series: Low Power
DD1
and I
DD4
depend on output loading and cycle rates. Specified values are measured with the output open
I
I
I
I
I
I
I
I
I
I
I
I
DD1
DD2P
DD2PS
DD2N
DD2NS
DD3P
DD3PS
DD3N
DD3NS
DD4
DD5
DD6
Sym-
bol
Burst length=1, One bank active
t
CKE ≤ V
CKE ≤ V
CKE ≥ V
15ns
Input signals are changed one time dur-
ing 2clks.
All other pins ≥ V
CKE ≥ V
Input signals are stable.
CKE ≤ V
CKE ≤ V
CKE ≥ V
15ns
Input signals are changed one time dur-
ing 2clks.
All other pins ≥ V
CKE ≥ V
Input signals are stable.
t
All banks active
t
CKE ≤ 0.2V
RC
CK
RC
(T
A
≥ t
≥ t
≥ t
= 0 to 70
RC
CK
RC
IL
IL
IH
IH
IL
IL
IH
IH
(min), I
(min), I
(min), All banks active
(max), t
(max), t
(max), t
(max), t
(min), CS ≥ V
(min), t
(min), CS ≥ V
(min), t
Test Condition
Synchronous DRAM Memory 128Mbit (8Mx16bit)
o
C)
OL
OL
DD
DD
CK
CK
CK
CK
CK
CK
=0mA
=0mA
-0.2V or ≤ 0.2V
-0.2V or ≤ 0.2V
= 15ns
= ∞
= ∞
= ∞
= 15ns
= ∞
IH
IH
(min), t
(min), t
Low power
Normal
CK
CK
=
=
HY57V281620E(L)T(P) Series
120
120
210
5
110
110
200
6
Speed
800
18
15
40
35
2
2
3
3
2
100
100
190
7
100
100
190
H
Unit Note
mA
mA
mA
mA
mA
mA
mA
mA
mA
uA
1
1
2
3
9