HY57V281620ELT Hynix Semiconductor, HY57V281620ELT Datasheet - Page 7

• Manufacturer Part Number: HY57V281620ELT
• Description: 128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O
• Manufacturer: Hynix Semiconductor

ABSOLUTE MAXIMUM RATING
DC OPERATING CONDITION
Note: 1. All voltages are referenced to V
AC OPERATING TEST CONDITION
Note 1.
Rev. 1.1 / Jan. 2005
AC Input High / Low Level Voltage
Input Timing Measurement Reference Level Voltage
Input Rise / Fall Time
Output Timing Measurement Reference Level Voltage
Output Load Capacitance for Access Time Measurement
Ambient Temperature
Storage Temperature
Voltage on Any Pin relative to VSS
Voltage on VDD relative to VSS
Short Circuit Output Current
Power Dissipation
Soldering Temperature / Time
Power Supply Voltage
Input High Voltage
Input Low Voltage
2. V
3. V
Parameter
IH
IL
(min) is acceptable -2.0V AC pulse width with <=3ns of duration
(max) is acceptable 5.6V AC pulse width with <=3ns of duration.
Output
Parameter
Parameter
DC Output Load Circuit
V
Symbol
DD,
SS
V
V
= 0V
IH
IL
V
DDQ
(T
A
= 0 to 70
(T
Synchronous DRAM Memory 128Mbit (8Mx16bit)
Vtt = 1.4V
RT = 500
Min.
A
-0.3
3.0
2.0
= 0 to 70
50pF
o
C)
Output
Ω
VDD, VDDQ
VIN, VOUT
TSOLDER
V
Symbol
Symbol
V
IH
t
o
TSTG
R
V
outref
C, V
IOS
CL
PD
TA
trip
Typ
/ t
3.3
3.0
/ V
-
F
IL
AC Output Load Circuit
DD
=3.3±0.3V, V
Z0 = 50
HY57V281620E(L)T(P) Series
V
DDQ +
Ω
2.4 / 0.4
Max
Value
3.6
0.8
1.4
1.4
50
1
-1.0 ~ 4.6
-1.0 ~ 4.6
-55 ~ 125
260 / 10
Rating
0.3
0 ~ 70
SS
50
1
=0V)
Vtt = 1.4V
RT = 50
50pF
Unit
V
V
V
Unit
Ω
ns
pF
V
V
V
o
C / Sec
Unit
Note
mA
o
o
1, 2
1, 3
W
V
V
C
C
Note
1
1
7