HY57V281620ELT Hynix Semiconductor, HY57V281620ELT Datasheet - Page 6

• Manufacturer Part Number: HY57V281620ELT
• Description: 128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O
• Manufacturer: Hynix Semiconductor

BASIC FUNCTIONAL DESCRIPTION
Mode Register
OP Code
Rev. 1.1 / Jan. 2005
CAS Latency
BA1
A6
A9
0
0
0
0
0
1
1
1
1
0
1
A5
BA0
0
0
1
1
0
0
1
1
0
Burst Read and Single Write
Burst Read and Burst Write
A4
A11
0
1
0
1
0
1
0
1
0
Write Mode
A10
0
CAS Latency
Reserved
Reserved
Reserved
Reserved
Reserved
1
2
3
OP Code
A9
A8
0
Synchronous DRAM Memory 128Mbit (8Mx16bit)
A7
0
Burst Length
A2
A6
0
0
0
0
1
1
1
1
CAS Latency
A1
0
0
1
1
0
0
1
1
A5
Burst Type
HY57V281620E(L)T(P) Series
A0
0
1
1
0
1
0
1
0
A3
0
1
A4
Reserved
Reserved
Reserved
Full Page
A3 = 0
A3
BT
Burst Type
Sequential
Interleave
1
2
4
8
Burst Length
A2
Burst Length
Reserved
Reserved
Reserved
Reserved
A1
A3=1
1
2
4
8
A0
6