HY57V281620ELT Hynix Semiconductor, HY57V281620ELT Datasheet - Page 12

• Manufacturer Part Number: HY57V281620ELT
• Description: 128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O
• Manufacturer: Hynix Semiconductor

COMMAND TRUTH TABLE
Rev. 1.1 / Jan. 2005
Mode Register Set
No Operation
Bank Active
Read
Read with Autoprecharge
Write
Write with Autoprecharge
Precharge All Banks
Precharge selected Bank
Burst Stop
DQM
Auto Refresh
Burst-Read-Single-WRITE
Self Refresh
Precharge
power down
Clock
Suspend
Command
1
Entry
Exit
Entry
Exit
Entry
Exit
CKEn-1
H
H
H
H
H
H
H
H
H
H
H
H
H
L
L
L
CKEn
X
X
X
X
X
X
X
H
X
H
H
H
L
L
L
CS
H
H
H
H
H
L
L
L
L
L
L
L
L
L
L
L
L
L
L
Synchronous DRAM Memory 128Mbit (8Mx16bit)
RAS
X
X
H
H
H
H
X
H
X
H
X
H
X
V
L
L
L
L
L
L
X
CAS
H
H
H
H
H
H
H
X
X
X
X
X
V
L
L
L
L
L
L
WE
H
H
H
H
H
H
H
H
X
X
X
X
X
V
L
L
L
L
L
DQM
X
X
X
X
X
X
X
V
X
X
X
X
X
X
X
X
HY57V281620E(L)T(P) Series
ADDR
CA
CA
X
(Other balls OP code)
A9 ball High
RA
OP code
A10/AP
X
X
X
X
X
X
X
H
H
H
L
L
L
BA
V
V
V
X
V
Note
Mode
MRS
12