FDB3632_F085 Fairchild Semiconductor, FDB3632_F085 Datasheet - Page 2

• Manufacturer Part Number: FDB3632_F085
• Description: MOSFET 100V N-Channel PowerTrench MOSFET
• Manufacturer: Fairchild Semiconductor

Specifications of FDB3632_F085

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 80 A
• Resistance Drain-source Rds (on): 7.5 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: TO-263AB-3
• Fall Time: 46 ns
• Gate Charge Qg: 84 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 310 W
• Rise Time: 39 ns
• Typical Turn-off Delay Time: 96 ns

©2004 Fairchild Semiconductor Corporation
FDB3632 / FDP3632 / FDI3632 / FDH3632 Rev. C4
Package Marking and Ordering Information
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Resistive Switching Characteristics
Drain-Source Diode Characteristics
Notes:
1: Starting T
2: Pulse Width = 100s
B
I
I
V
r
C
C
C
Q
Q
Q
Q
Q
t
t
t
t
t
t
V
t
Q
DSS
GSS
ON
d(ON)
r
d(OFF)
f
OFF
rr
DS(ON)
GS(TH)
VDSS
ISS
OSS
RSS
SD
g(TOT)
g(TH)
gs
gs2
gd
RR
Symbol
Device Marking
FDH3632
FDB3632
FDP3632
FDI3632
J
= 25°C, L = 0.12mH, I
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Gate to Source Threshold Voltage
Drain to Source On Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Threshold Gate Charge
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Source to Drain Diode Voltage
Reverse Recovery Time
Reverse Recovered Charge
AS
Parameter
= 75A, V
FDB3632
FDP3632
FDH3632
FDI3632
Device
DD
= 80V.
T
C
= 25°C unless otherwise noted
(V
GS
TO-263AB
TO-220AB
TO-262AB
Package
TO-247
= 10V)
I
V
V
V
V
I
I
I
V
f = 1MHz
V
V
V
V
I
I
I
I
D
D
D
D
SD
SD
SD
SD
GS
GS
GS
GS
DS
GS
DS
DD
GS
=80A, V
=80A, V
= 250µA, V
=40A, V
= 80A
= 40A
= 75A, dI
= 75A, dI
2
= 80V
= 0V
= ±20V
= 25V, V
= 0V to 10V
= 0V to 2V
= V
= 50V, I
= 10V, R
Test Conditions
DS
GS
GS
GS
, I
D
D
=10V
=10V, T
SD
SD
GS
GS
GS
= 6V,
= 80A
= 250µA
Reel Size
/dt= 100A/µs
/dt= 100A/µs
330mm
= 0V,
= 0V
= 3.6Ω
Tube
Tube
Tube
T
V
I
I
D
g
C
DD
= 1.0mA
C
= 80A
= 150
=175
= 50V
o
o
C
C
Tape Width
Min
100
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
24mm
N/A
N/A
N/A
0.0075
0.009
0.018
6000
820
200
Typ
84
11
30
20
20
30
39
96
46
-
-
-
-
-
-
-
-
-
-
-
www.fairchildsemi.com
0.009
0.015
0.022
±100
Max
1.25
250
110
102
213
120
1.0
14
64
1
4
-
-
-
-
-
-
-
Quantity
800 units
-
-
-
-
50 units
30 units
50 units
Units
nA
nC
nC
nC
nC
nC
µA
pF
pF
pF
nC
ns
ns
ns
ns
ns
ns
ns
V
V
Ω
V
V