FDB3632_F085 Fairchild Semiconductor, FDB3632_F085 Datasheet - Page 6

• Manufacturer Part Number: FDB3632_F085
• Description: MOSFET 100V N-Channel PowerTrench MOSFET
• Manufacturer: Fairchild Semiconductor

Specifications of FDB3632_F085

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 80 A
• Resistance Drain-source Rds (on): 7.5 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: TO-263AB-3
• Fall Time: 46 ns
• Gate Charge Qg: 84 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 310 W
• Rise Time: 39 ns
• Typical Turn-off Delay Time: 96 ns

©2004 Fairchild Semiconductor Corporation
FDB3632 / FDP3632 / FDI3632 / FDH3632 Rev. C4
Test Circuits and Waveforms
VARY t
REQUIRED PEAK I
V
0V
GS
I
Figure 15. Unclamped Energy Test Circuit
g(REF)
Figure 19. Switching Time Test Circuit
P
Figure 17. Gate Charge Test Circuit
TO OBTAIN
V
t
GS
P
V
GS
AS
R
GS
R
V
G
GS
V
DS
V
DUT
DS
V
I
AS
DS
L
DUT
R
DUT
L
0.01Ω
L
-
+
V
-
+
-
+
DD
V
V
DD
DD
6
0
0
0
Q
V
V
g(TH)
GS
DS
I
10%
V
g(REF)
Figure 16. Unclamped Energy Waveforms
0
0
DD
V
GS
Figure 20. Switching Time Waveforms
V
Figure 18. Gate Charge Waveforms
= 2V
GS
t
d(ON)
90%
Q
t
50%
ON
Q
gs
10%
gs2
t
r
I
AS
PULSE WIDTH
t
P
Q
gd
V
DS
Q
BV
g(TOT)
t
AV
DSS
t
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d(OFF)
90%
V
t
DS
OFF
50%
V
t
f
GS
10%
= 10V
V
DD
90%