FDB3632_F085 Fairchild Semiconductor, FDB3632_F085 Datasheet - Page 4

• Manufacturer Part Number: FDB3632_F085
• Description: MOSFET 100V N-Channel PowerTrench MOSFET
• Manufacturer: Fairchild Semiconductor

Specifications of FDB3632_F085

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 80 A
• Resistance Drain-source Rds (on): 7.5 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: TO-263AB-3
• Fall Time: 46 ns
• Gate Charge Qg: 84 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 310 W
• Rise Time: 39 ns
• Typical Turn-off Delay Time: 96 ns

©2004 Fairchild Semiconductor Corporation
FDB3632 / FDP3632 / FDI3632 / FDH3632 Rev. C4
Typical Characteristics
Figure 9. Drain to Source On Resistance vs Drain
400
100
Figure 5. Forward Bias Safe Operating Area
0.1
10
150
120
1
90
60
30
10
0
9
8
7
6
3.0
1
0
SINGLE PULSE
T
T
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
OPERATION IN THIS
Figure 7. Transfer Characteristics
J
C
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V
LIMITED BY r
= MAX RATED
= 25
DD
AREA MAY BE
= 15V
o
C
3.5
V
T
DS
J
V
, DRAIN TO SOURCE VOLTAGE (V)
= 25
GS
20
DS(ON)
, GATE TO SOURCE VOLTAGE (V)
o
C
4.0
I
D
T
Current
, DRAIN CURRENT (A)
J
= 175
10
4.5
o
40
C
V
V
T
GS
GS
A
5.0
= 6V
= 10V
= 25°C unless otherwise noted
T
62
J
= -55
5.5
100
o
C
100µs
10ms
10µs
DC
1ms
200
6.0
80
4
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
100
150
120
200
90
60
30
10
Figure 10. Normalized Drain to Source On
Figure 6. Unclamped Inductive Switching
0
0.01
2.5
2.0
1.5
1.0
0.5
0
Resistance vs Junction Temperature
Figure 8. Saturation Characteristics
-80
t
t
If R = 0
If R ≠ 0
AV
AV
STARTING T
V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
GS
= (L)(I
= (L/R)ln[(I
= 10V
-40
AS
V
)/(1.3*RATED BV
DS
T
J
AS
J
1
= 150
, DRAIN TO SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (
t
*R)/(1.3*RATED BV
AV
0
0.1
, TIME IN AVALANCHE (ms)
Capability
o
C
STARTING T
V
40
GS
DSS
= 6V
2
- V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
80
DD
DSS
J
)
= 25
- V
1
V
GS
DD
www.fairchildsemi.com
120
o
C
V
) +1]
= 10V, I
o
V
GS
3
C)
GS
= 5.5V
= 5V
T
160
C
D
= 25
=80A
o
C
200
10
4