FDB3632_F085 Fairchild Semiconductor, FDB3632_F085 Datasheet - Page 5

• Manufacturer Part Number: FDB3632_F085
• Description: MOSFET 100V N-Channel PowerTrench MOSFET
• Manufacturer: Fairchild Semiconductor

Specifications of FDB3632_F085

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 80 A
• Resistance Drain-source Rds (on): 7.5 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: TO-263AB-3
• Fall Time: 46 ns
• Gate Charge Qg: 84 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 310 W
• Rise Time: 39 ns
• Typical Turn-off Delay Time: 96 ns

©2004 Fairchild Semiconductor Corporation
FDB3632 / FDP3632 / FDI3632 / FDH3632 Rev. C4
Typical Characteristics
Figure 11. Normalized Gate Threshold Voltage vs
10000
Figure 13. Capacitance vs Drain to Source
1000
100
1.4
1.2
1.0
0.8
0.6
0.4
0.2
-80
0.1
C
C
V
OSS
RSS
GS
-40
= 0V, f = 1MHz
≅ C
= C
Junction Temperature
V
GD
DS
DS
T
J
+ C
, JUNCTION TEMPERATURE (
, DRAIN TO SOURCE VOLTAGE (V)
0
GD
1
Voltage
40
80
C
V
T
ISS
GS
A
10
= C
= 25°C unless otherwise noted
= V
120
GS
DS
o
C)
, I
+ C
D
= 250µA
GD
160
100
200
5
Figure 14. Gate Charge Waveforms for Constant
Breakdown Voltage vs Junction Temperature
10
8
6
4
2
0
1.2
1.1
1.0
0.9
Figure 12. Normalized Drain to Source
0
-80
V
DD
I
D
= 250µA
= 50V
-40
20
T
J
, JUNCTION TEMPERATURE (
Gate Currents
0
Q
g
, GATE CHARGE (nC)
40
40
WAVEFORMS IN
DESCENDING ORDER:
80
60
I
I
D
D
= 80A
= 40A
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120
o
C)
80
160
200
100