IHW30N135R3FKSA1 Infineon Technologies, IHW30N135R3FKSA1 Datasheet - Page 12

• Manufacturer Part Number: IHW30N135R3FKSA1
• Description: IGBT Transistors IGBT PRODUCTS
• Manufacturer: Infineon Technologies

Specifications of IHW30N135R3FKSA1

• Rohs: yes
• Collector- Emitter Voltage Vceo Max: 1.35 kV
• Collector-emitter Saturation Voltage: 1.85 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current At 25 C: 60 A
• Gate-emitter Leakage Current: 100 nA
• Power Dissipation: 175 W
• Package / Case: TO-247-3
• Continuous Collector Current Ic Max: 30 A
• Mounting Style: Through Hole
• Part # Aliases: IHW30N135R3 IHW30N135R3XK

Figure 21. Typicaldiodeforwardcurrentasafunction
60
50
40
30
20
10
0
0.0
offorwardvoltage
T
T
0.5
j
j
=25°C
=175°C
V
F
,FORWARDVOLTAGE[V]
1.0
1.5
2.0
InductionHeatingSeries
2.5
3.0
12
Figure 22. Typicaldiodeforwardvoltageasafunction
3.0
2.5
2.0
1.5
1.0
0.5
0
ofjunctiontemperature
T
25
I
I
I
vj
F
F
F
=15A
=30A
=60A
,JUNCTIONTEMPERATURE[°C]
50
75
IHW30N135R3
100
Rev.2.1,2012-10-12
125
150
175