IHW30N135R3FKSA1 Infineon Technologies, IHW30N135R3FKSA1 Datasheet - Page 9

• Manufacturer Part Number: IHW30N135R3FKSA1
• Description: IGBT Transistors IGBT PRODUCTS
• Manufacturer: Infineon Technologies

Specifications of IHW30N135R3FKSA1

• Rohs: yes
• Collector- Emitter Voltage Vceo Max: 1.35 kV
• Collector-emitter Saturation Voltage: 1.85 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current At 25 C: 60 A
• Gate-emitter Leakage Current: 100 nA
• Power Dissipation: 175 W
• Package / Case: TO-247-3
• Continuous Collector Current Ic Max: 30 A
• Mounting Style: Through Hole
• Part # Aliases: IHW30N135R3 IHW30N135R3XK

Figure 9. Typicalswitchingtimesasafunctionof
Figure 11. Gate-emitterthresholdvoltageasafunction
1000
100
10
8
7
6
5
4
3
2
0
0
gateresistor
(inductiveload,T
V
Figure E)
ofjunctiontemperature
(I
GE
T
C
25
t
t
typ.
min.
max.
=15/0V,I
vj
=0.75mA)
d(off)
f
,JUNCTIONTEMPERATURE[°C]
10
r
G
50
,GATERESISTOR[ ]
C
=30A,Dynamictestcircuitin
20
75
vj
=175°C,V
100
30
CE
125
=600V,
40
InductionHeatingSeries
150
175
50
9
Figure 10. Typicalswitchingtimesasafunctionof
Figure 12. Typicalswitchingenergylossesasa
1000
100
10
7
6
5
4
3
2
1
0
25
0
junctiontemperature
(inductiveload,V
I
Figure E)
functionofcollectorcurrent
(inductiveload,T
V
Figure E)
C
T
GE
=30A,r
t
t
E
vj
d(off)
f
50
10
,JUNCTIONTEMPERATURE[°C]
off
=15/0V,r
I
C
,COLLECTORCURRENT[A]
G
=10 ,Dynamictestcircuitin
75
20
G
=10 ,Dynamictestcircuitin
CE
vj
100
=175°C,V
30
=600V,V
IHW30N135R3
125
40
Rev.2.1,2012-10-12
GE
CE
=600V,
=15/0V,
150
50
175
60